Ferroelectric control of the conduction at the LaAlO 3 /SrTiO 3 heterointerface

Vu Thanh Tra, Jhih Wei Chen, Po Cheng Huang, Bo Chao Huang, Ye Cao, Chao Hui Yeh, Heng Jui Liu, Eugene A. Eliseev, Anna N. Morozovska, Jiunn-Yuan Lin*, Yi Chun Chen, Ming Wen Chu, Po Wen Chiu, Ya Ping Chiu, Long Qing Chen, Chung Lin Wu, Ying-hao Chu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

88 Scopus citations


Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (P up ) leads to charge depletion and consequently low conduction. Switching the polarization direction (P down ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

Original languageEnglish
Pages (from-to)3357-3364
Number of pages8
JournalAdvanced Materials
Issue number24
StatePublished - 25 Jun 2013


  • 2D electron gases (2DEG)
  • complex oxides
  • ferroelectric polarization
  • heterointerfaces
  • metal-insulator transitions


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