Ferroelectric control of the conduction at the LaAlO 3 /SrTiO 3 heterointerface

Vu Thanh Tra; Jhih Wei Chen; Po Cheng Huang; Bo Chao Huang; Ye Cao; Chao Hui Yeh; Heng Jui Liu; Eugene A. Eliseev; Anna N. Morozovska; Jiunn-Yuan Lin; Yi Chun Chen; Ming Wen Chu; Po Wen Chiu; Ya Ping Chiu; Long Qing Chen; Chung Lin Wu; Ying-hao Chu

doi:10.1002/adma.201300757

Ferroelectric control of the conduction at the LaAlO ₃ /SrTiO ₃ heterointerface

Vu Thanh Tra, Jhih Wei Chen, Po Cheng Huang, Bo Chao Huang, Ye Cao, Chao Hui Yeh, Heng Jui Liu, Eugene A. Eliseev, Anna N. Morozovska, Jiunn-Yuan Lin^*, Yi Chun Chen, Ming Wen Chu, Po Wen Chiu, Ya Ping Chiu, Long Qing Chen, Chung Lin Wu, Ying-hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

88 Scopus citations

Abstract

Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (P _up ) leads to charge depletion and consequently low conduction. Switching the polarization direction (P _down ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

Original language	English
Pages (from-to)	3357-3364
Number of pages	8
Journal	Advanced Materials
Volume	25
Issue number	24
DOIs	https://doi.org/10.1002/adma.201300757
State	Published - 25 Jun 2013

Keywords

2D electron gases (2DEG)
complex oxides
ferroelectric polarization
heterointerfaces
metal-insulator transitions

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10.1002/adma.201300757

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Tra, V. T., Chen, J. W., Huang, P. C., Huang, B. C., Cao, Y., Yeh, C. H., Liu, H. J., Eliseev, E. A., Morozovska, A. N., Lin, J-Y., Chen, Y. C., Chu, M. W., Chiu, P. W., Chiu, Y. P., Chen, L. Q., Wu, C. L., & Chu, Y. (2013). Ferroelectric control of the conduction at the LaAlO ₃ /SrTiO ₃ heterointerface. Advanced Materials, 25(24), 3357-3364. https://doi.org/10.1002/adma.201300757

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abstract = " Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (P up ) leads to charge depletion and consequently low conduction. Switching the polarization direction (P down ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.",

keywords = "2D electron gases (2DEG), complex oxides, ferroelectric polarization, heterointerfaces, metal-insulator transitions",

author = "Tra, {Vu Thanh} and Chen, {Jhih Wei} and Huang, {Po Cheng} and Huang, {Bo Chao} and Ye Cao and Yeh, {Chao Hui} and Liu, {Heng Jui} and Eliseev, {Eugene A.} and Morozovska, {Anna N.} and Jiunn-Yuan Lin and Chen, {Yi Chun} and Chu, {Ming Wen} and Chiu, {Po Wen} and Chiu, {Ya Ping} and Chen, {Long Qing} and Wu, {Chung Lin} and Ying-hao Chu",

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T1 - Ferroelectric control of the conduction at the LaAlO 3 /SrTiO 3 heterointerface

AU - Tra, Vu Thanh

AU - Chen, Jhih Wei

AU - Huang, Po Cheng

AU - Huang, Bo Chao

AU - Cao, Ye

AU - Yeh, Chao Hui

AU - Liu, Heng Jui

AU - Eliseev, Eugene A.

AU - Morozovska, Anna N.

AU - Lin, Jiunn-Yuan

AU - Chen, Yi Chun

AU - Chu, Ming Wen

AU - Chiu, Po Wen

AU - Chiu, Ya Ping

AU - Chen, Long Qing

AU - Wu, Chung Lin

AU - Chu, Ying-hao

PY - 2013/6/25

Y1 - 2013/6/25

N2 - Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (P up ) leads to charge depletion and consequently low conduction. Switching the polarization direction (P down ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

AB - Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (P up ) leads to charge depletion and consequently low conduction. Switching the polarization direction (P down ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

KW - 2D electron gases (2DEG)

KW - complex oxides

KW - ferroelectric polarization

KW - heterointerfaces

KW - metal-insulator transitions

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DO - 10.1002/adma.201300757

M3 - Article

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SN - 0935-9648

VL - 25

SP - 3357

EP - 3364

JO - Advanced Materials

JF - Advanced Materials

IS - 24

ER -

Ferroelectric control of the conduction at the LaAlO ₃ /SrTiO ₃ heterointerface

Abstract

Keywords

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