FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

K. Y. Hsiang*, J. Y. Lee, F. S. Chang, Z. F. Lou, Z. X. Li, Z. H. Li, J. H. Chen, C. W. Liu, T. H. Hou, M. H. Lee*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

Original languageEnglish
Title of host publication2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863488069
DOIs
StatePublished - 2023
Event2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan
Duration: 11 Jun 202316 Jun 2023

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2023-June
ISSN (Print)0743-1562

Conference

Conference2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Country/TerritoryJapan
CityKyoto
Period11/06/2316/06/23

Keywords

  • Endurance
  • Ferroelectric
  • Recovery

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