Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

Alvaro Padilla*, Chun Wing Yeung, Changhwan Shin, Chen-Ming Hu, Tsu Jae King Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

65 Scopus citations

Abstract

A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I ON/I OFF ratio (∼10 8) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
StatePublished - 1 Dec 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 15 Dec 200817 Dec 2008

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/TerritoryUnited States
CitySan Francisco, CA
Period15/12/0817/12/08

Fingerprint

Dive into the research topics of 'Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages'. Together they form a unique fingerprint.

Cite this