Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme

Chuan An Cheng; Yu Hsiang Huang; Chien Hung Lin; Chia Lin Lee; Shan Chun Yang; Kuan-Neng Chen

doi:10.1109/JEDS.2017.2661479

Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme

Chuan An Cheng, Yu Hsiang Huang, Chien Hung Lin, Chia Lin Lee, Shan Chun Yang, Kuan-Neng Chen^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 °C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.

Original language	English
Article number	7837582
Pages (from-to)	136-140
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/JEDS.2017.2661479
State	Published - 1 Mar 2017

Keywords

Three-dimensional integration
laser release
temporary bonding

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10.1109/JEDS.2017.2661479

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@article{bb026048679e4b5394b21d76c2df2eb0,

title = "Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme",

abstract = "A reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 °C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.",

keywords = "Three-dimensional integration, laser release, temporary bonding",

author = "Cheng, {Chuan An} and Huang, {Yu Hsiang} and Lin, {Chien Hung} and Lee, {Chia Lin} and Yang, {Shan Chun} and Kuan-Neng Chen",

year = "2017",

month = mar,

day = "1",

doi = "10.1109/JEDS.2017.2661479",

language = "English",

volume = "5",

pages = "136--140",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme

AU - Cheng, Chuan An

AU - Huang, Yu Hsiang

AU - Lin, Chien Hung

AU - Lee, Chia Lin

AU - Yang, Shan Chun

AU - Chen, Kuan-Neng

PY - 2017/3/1

Y1 - 2017/3/1

N2 - A reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 °C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.

AB - A reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 °C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.

KW - Three-dimensional integration

KW - laser release

KW - temporary bonding

UR - http://www.scopus.com/inward/record.url?scp=85014033113&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2017.2661479

DO - 10.1109/JEDS.2017.2661479

M3 - Article

AN - SCOPUS:85014033113

SN - 2168-6734

VL - 5

SP - 136

EP - 140

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

IS - 2

M1 - 7837582

ER -

Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme

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Keywords

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