Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

K. Y. Hsiang, J. Y. Lee, Z. F. Lou, F. S. Chang, Y. C. Chen, Z. X. Li, M. H. Liao, C. W. Liu, T. H. Hou, P. Su, M. H. Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Opposite polarity cycling recovery (OPCR) is proposed to completely restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling is revealed to achieve unlimited endurance, and the unipolar cycling with OPCR is experimentally demonstrated to accumulate 1012 cycles, while achieving the nondegradation and complete restoration of the remnant polarization (Pr). Furthermore, the proposed OPCR achieves a recovery time ratio of 0% (trecovery/tperiod), which indicates no extra time to spend for the recovery procedure.

Original languageEnglish
Pages (from-to)2142-2146
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume70
Issue number4
DOIs
StatePublished - 1 Apr 2023

Keywords

  • Antiferroelectric (AFE)
  • endurance
  • recovery

Fingerprint

Dive into the research topics of 'Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM'. Together they form a unique fingerprint.

Cite this