Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

Pang Shiuan Liu; Chang Hsiao Chen; Wei Ting Hsu; Chih Pin Lin; Tzu Ping Lin; Li Jen Chi; Chao Yuan Chang; Shih Chieh Wu; Wen-Hao Chang; Lain Jong Li; Tuo-Hung Hou

doi:10.1109/IEDM.2014.7046992

Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂

Pang Shiuan Liu, Chang Hsiao Chen, Wei Ting Hsu, Chih Pin Lin, Tzu Ping Lin, Li Jen Chi, Chao Yuan Chang, Shih Chieh Wu, Wen-Hao Chang, Lain Jong Li, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe₂. Because of its excellent compatibility with mass production, the application of WSe₂ UTB-PT for high-speed proximity interactive display has been proposed.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5.7.1-5.7.4
Number of pages	4
Volume	2015-February
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7046992
State	Published - 15 Dec 2014
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 15 Dec 2014 → 17 Dec 2014

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISSN (Print)	0163-1918

Conference

Conference	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	15/12/14 → 17/12/14

Access to Document

10.1109/IEDM.2014.7046992

Cite this

Liu, P. S., Chen, C. H., Hsu, W. T., Lin, C. P., Lin, T. P., Chi, L. J., Chang, C. Y., Wu, S. C., Chang, W.-H., Li, L. J., & Hou, T.-H. (2014). Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., Vol. 2015-February, pp. 5.7.1-5.7.4). Article 7046992 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7046992

Liu, Pang Shiuan ; Chen, Chang Hsiao ; Hsu, Wei Ting et al. / Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂. 2014 IEEE International Electron Devices Meeting, IEDM 2014. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 5.7.1-5.7.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{3de635391a8c418aa537e36626d2359c,

title = "Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2",

abstract = "P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.",

author = "Liu, {Pang Shiuan} and Chen, {Chang Hsiao} and Hsu, {Wei Ting} and Lin, {Chih Pin} and Lin, {Tzu Ping} and Chi, {Li Jen} and Chang, {Chao Yuan} and Wu, {Shih Chieh} and Wen-Hao Chang and Li, {Lain Jong} and Tuo-Hung Hou",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

year = "2014",

month = dec,

day = "15",

doi = "10.1109/IEDM.2014.7046992",

language = "English",

volume = "2015-February",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "5.7.1--5.7.4",

booktitle = "2014 IEEE International Electron Devices Meeting, IEDM 2014",

address = "United States",

edition = "February",

}

Liu, PS, Chen, CH, Hsu, WT, Lin, CP, Lin, TP, Chi, LJ, Chang, CY, Wu, SC, Chang, W-H, Li, LJ & Hou, T-H 2014, Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, vol. 2015-February, 7046992, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 5.7.1-5.7.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 15/12/14. https://doi.org/10.1109/IEDM.2014.7046992

Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂. / Liu, Pang Shiuan; Chen, Chang Hsiao; Hsu, Wei Ting et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2014. p. 5.7.1-5.7.4 7046992 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

AU - Liu, Pang Shiuan

AU - Chen, Chang Hsiao

AU - Hsu, Wei Ting

AU - Lin, Chih Pin

AU - Lin, Tzu Ping

AU - Chi, Li Jen

AU - Chang, Chao Yuan

AU - Wu, Shih Chieh

AU - Chang, Wen-Hao

AU - Li, Lain Jong

AU - Hou, Tuo-Hung

PY - 2014/12/15

Y1 - 2014/12/15

N2 - P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.

AB - P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.

UR - http://www.scopus.com/inward/record.url?scp=84938218021&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2014.7046992

DO - 10.1109/IEDM.2014.7046992

M3 - Conference contribution

AN - SCOPUS:84938218021

VL - 2015-February

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 5.7.1-5.7.4

BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

Y2 - 15 December 2014 through 17 December 2014

ER -

Liu PS, Chen CH, Hsu WT, Lin CP, Lin TP, Chi LJ et al. Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe₂. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Vol. 2015-February. Institute of Electrical and Electronics Engineers Inc. 2014. p. 5.7.1-5.7.4. 7046992. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2014.7046992