Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO2 layer in p-MOSFETs

Ying Hsin Lu; Ting Chang Chang; Jih Chien Liao; Li Hui Chen; Yu Shan Lin; Ching En Chen; Kuan Ju Liu; Xi Wen Liu; Chien Yu Lin; Chen Hsin Lien; Tseung-Yuen Tseng; Osbert Cheng; Cheng Tung Huang; Wei Ting Yen

doi:10.1109/TDMR.2017.2672740

Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO₂ layer in p-MOSFETs

Ying Hsin Lu, Ting Chang Chang, Jih Chien Liao, Li Hui Chen, Yu Shan Lin, Ching En Chen, Kuan Ju Liu, Xi Wen Liu, Chien Yu Lin, Chen Hsin Lien, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang, Wei Ting Yen

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO₂ layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO₂ layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO₂ layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO₂ layer.

Original language	English
Article number	7862173
Pages (from-to)	475-478
Number of pages	4
Journal	IEEE Transactions on Device and Materials Reliability
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2017.2672740
State	Published - Jun 2017

Keywords

Fast IV sweep
Hole trapping
Negative bias temperature instability (NBTI)
Process-related pre-existing defects

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10.1109/TDMR.2017.2672740

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Lu, Y. H., Chang, T. C., Liao, J. C., Chen, L. H., Lin, Y. S., Chen, C. E., Liu, K. J., Liu, X. W., Lin, C. Y., Lien, C. H., Tseng, T.-Y., Cheng, O., Huang, C. T., & Yen, W. T. (2017). Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO₂ layer in p-MOSFETs. IEEE Transactions on Device and Materials Reliability, 17(2), 475-478. Article 7862173. https://doi.org/10.1109/TDMR.2017.2672740

@article{d1caed6020874f789d7612b6273cfaad,

title = "Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO2 layer in p-MOSFETs",

abstract = "This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO2 layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO2 layer.",

keywords = "Fast IV sweep, Hole trapping, Negative bias temperature instability (NBTI), Process-related pre-existing defects",

author = "Lu, {Ying Hsin} and Chang, {Ting Chang} and Liao, {Jih Chien} and Chen, {Li Hui} and Lin, {Yu Shan} and Chen, {Ching En} and Liu, {Kuan Ju} and Liu, {Xi Wen} and Lin, {Chien Yu} and Lien, {Chen Hsin} and Tseung-Yuen Tseng and Osbert Cheng and Huang, {Cheng Tung} and Yen, {Wei Ting}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = jun,

doi = "10.1109/TDMR.2017.2672740",

language = "English",

volume = "17",

pages = "475--478",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

Lu, YH, Chang, TC, Liao, JC, Chen, LH, Lin, YS, Chen, CE, Liu, KJ, Liu, XW, Lin, CY, Lien, CH, Tseng, T-Y, Cheng, O, Huang, CT & Yen, WT 2017, 'Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO₂ layer in p-MOSFETs', IEEE Transactions on Device and Materials Reliability, vol. 17, no. 2, 7862173, pp. 475-478. https://doi.org/10.1109/TDMR.2017.2672740

TY - JOUR

T1 - Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO2 layer in p-MOSFETs

AU - Lu, Ying Hsin

AU - Chang, Ting Chang

AU - Liao, Jih Chien

AU - Chen, Li Hui

AU - Lin, Yu Shan

AU - Chen, Ching En

AU - Liu, Kuan Ju

AU - Liu, Xi Wen

AU - Lin, Chien Yu

AU - Lien, Chen Hsin

AU - Tseng, Tseung-Yuen

AU - Cheng, Osbert

AU - Huang, Cheng Tung

AU - Yen, Wei Ting

PY - 2017/6

Y1 - 2017/6

N2 - This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO2 layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO2 layer.

AB - This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO2 layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO2 layer.

KW - Fast IV sweep

KW - Hole trapping

KW - Negative bias temperature instability (NBTI)

KW - Process-related pre-existing defects

UR - http://www.scopus.com/inward/record.url?scp=85025811506&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2017.2672740

DO - 10.1109/TDMR.2017.2672740

M3 - Article

AN - SCOPUS:85025811506

SN - 1530-4388

VL - 17

SP - 475

EP - 478

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 2

M1 - 7862173

ER -

Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO₂ layer in p-MOSFETs

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