Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test

Guoyan Zhang; Aihua Dong; Nie Liu; Rui Tian; Xuejiao Yang; Zhiwei Liu; Kohui Lee; Horng-Chih Lin; Juin J. Liou; Wang Yuxin

doi:10.1109/EDSSC.2014.7061114

Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test

Guoyan Zhang, Aihua Dong, Nie Liu, Rui Tian, Xuejiao Yang, Zhiwei Liu, Kohui Lee, Horng-Chih Lin, Juin J. Liou, Wang Yuxin

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Electrostatic discharge (ESD) characters of Nanowire Field Effect Transistors have been tested and analyzed in detail in this paper. TLP (transmission line pulsing technique) and semiconductor characterization system have been used for experiments. The failure currents and leakage currents of Nanowire Field Effect Transistor are characterized. Also, physical insights and failure model are provided to analyze the failure mechanism.

Original language	English
Title of host publication	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479923342
DOIs	https://doi.org/10.1109/EDSSC.2014.7061114
State	Published - 13 Mar 2014
Event	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China Duration: 18 Jun 2014 → 20 Jun 2014

Publication series

Name	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Country/Territory	China
City	Chengdu
Period	18/06/14 → 20/06/14

Keywords

Electrostatic discharge (ESD)
Failure analysis
Nanowire FET
TLP

Access to Document

10.1109/EDSSC.2014.7061114

Cite this

Zhang, G., Dong, A., Liu, N., Tian, R., Yang, X., Liu, Z., Lee, K., Lin, H.-C., Liou, J. J., & Yuxin, W. (2014). Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 Article 7061114 (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2014.7061114

Zhang, Guoyan ; Dong, Aihua ; Liu, Nie et al. / Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test. 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

@inproceedings{4305e0dbb1aa4b6eb6b6797cda5a2803,

title = "Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test",

abstract = "Electrostatic discharge (ESD) characters of Nanowire Field Effect Transistors have been tested and analyzed in detail in this paper. TLP (transmission line pulsing technique) and semiconductor characterization system have been used for experiments. The failure currents and leakage currents of Nanowire Field Effect Transistor are characterized. Also, physical insights and failure model are provided to analyze the failure mechanism.",

keywords = "Electrostatic discharge (ESD), Failure analysis, Nanowire FET, TLP",

author = "Guoyan Zhang and Aihua Dong and Nie Liu and Rui Tian and Xuejiao Yang and Zhiwei Liu and Kohui Lee and Horng-Chih Lin and Liou, {Juin J.} and Wang Yuxin",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 ; Conference date: 18-06-2014 Through 20-06-2014",

year = "2014",

month = mar,

day = "13",

doi = "10.1109/EDSSC.2014.7061114",

language = "English",

series = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",

address = "美國",

}

Zhang, G, Dong, A, Liu, N, Tian, R, Yang, X, Liu, Z, Lee, K, Lin, H-C, Liou, JJ & Yuxin, W 2014, Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test. in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014., 7061114, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Chengdu, China, 18/06/14. https://doi.org/10.1109/EDSSC.2014.7061114

Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test. / Zhang, Guoyan; Dong, Aihua; Liu, Nie et al.
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7061114 (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test

AU - Zhang, Guoyan

AU - Dong, Aihua

AU - Liu, Nie

AU - Tian, Rui

AU - Yang, Xuejiao

AU - Liu, Zhiwei

AU - Lee, Kohui

AU - Lin, Horng-Chih

AU - Liou, Juin J.

AU - Yuxin, Wang

PY - 2014/3/13

Y1 - 2014/3/13

N2 - Electrostatic discharge (ESD) characters of Nanowire Field Effect Transistors have been tested and analyzed in detail in this paper. TLP (transmission line pulsing technique) and semiconductor characterization system have been used for experiments. The failure currents and leakage currents of Nanowire Field Effect Transistor are characterized. Also, physical insights and failure model are provided to analyze the failure mechanism.

AB - Electrostatic discharge (ESD) characters of Nanowire Field Effect Transistors have been tested and analyzed in detail in this paper. TLP (transmission line pulsing technique) and semiconductor characterization system have been used for experiments. The failure currents and leakage currents of Nanowire Field Effect Transistor are characterized. Also, physical insights and failure model are provided to analyze the failure mechanism.

KW - Electrostatic discharge (ESD)

KW - Failure analysis

KW - Nanowire FET

KW - TLP

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U2 - 10.1109/EDSSC.2014.7061114

DO - 10.1109/EDSSC.2014.7061114

M3 - Conference contribution

AN - SCOPUS:84949925890

T3 - 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

BT - 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Y2 - 18 June 2014 through 20 June 2014

ER -

Zhang G, Dong A, Liu N, Tian R, Yang X, Liu Z et al. Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7061114. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). doi: 10.1109/EDSSC.2014.7061114

Failure analysis of Gate-all-around Nanowire Field Effect Transistor under TLP test

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