Abstract
In x-ray applications, x-ray zone plates are very useful as microfocusing components in x-ray optics. This paper presents both theoretical consideration and the fabrication procedure for producing π-phase shift x-ray zone plates for x-ray focusing in the range of 800 eV to 1700 eV in x-ray scanning photon emission microscopy by x-ray mask technology. The x-ray zone plates are fabricated on 0.7 μm low-stress silicon-rich silicon nitride (SiNx) membranes with tri-layer Chromium-Tungsten-Chromium (Cr-W-Cr) as x-ray absorbers instead of Nickel or Gold. The SiNx film is deposited on the (100) silicon substrate using low pressure chemical vapor deposition (LPCVD), and the free standing membranes are formed by means of KOH silicon backside etching. With e-beam lithography and reactive ion etching, a width of 0.8 μm of outmost zone of the x-ray zone plates was obtained. Scanning electron microscopy (SEM) images of the x-ray zone plates are shown.
Original language | English |
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Pages (from-to) | 611-615 |
Number of pages | 5 |
Journal | Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering |
Volume | 21 |
Issue number | 6 |
State | Published - Nov 1997 |