Fabrication of Pi-phase shift x-ray zone plates

Jeng-Tzong Sheu*, Ming Hsiung Chiang, Shyang Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In x-ray applications, x-ray zone plates are very useful as microfocusing components in x-ray optics. This paper presents both theoretical consideration and the fabrication procedure for producing π-phase shift x-ray zone plates for x-ray focusing in the range of 800 eV to 1700 eV in x-ray scanning photon emission microscopy by x-ray mask technology. The x-ray zone plates are fabricated on 0.7 μm low-stress silicon-rich silicon nitride (SiNx) membranes with tri-layer Chromium-Tungsten-Chromium (Cr-W-Cr) as x-ray absorbers instead of Nickel or Gold. The SiNx film is deposited on the (100) silicon substrate using low pressure chemical vapor deposition (LPCVD), and the free standing membranes are formed by means of KOH silicon backside etching. With e-beam lithography and reactive ion etching, a width of 0.8 μm of outmost zone of the x-ray zone plates was obtained. Scanning electron microscopy (SEM) images of the x-ray zone plates are shown.

Original languageEnglish
Pages (from-to)611-615
Number of pages5
JournalProceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering
Volume21
Issue number6
StatePublished - Nov 1997

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