Fabrication of phase-change Ge2Sb2Te5 nano-rings

Cheng Hung Chu; Ming Lun Tseng; Chiun Da Shiue; Shuan Wei Chen; Hai Pang Chiang; Masud Mansuripur; Din Ping Tsai

doi:10.1364/OE.19.012652

Fabrication of phase-change Ge₂Sb₂Te₅ nano-rings

Cheng Hung Chu, Ming Lun Tseng, Chiun Da Shiue, Shuan Wei Chen, Hai Pang Chiang, Masud Mansuripur, Din Ping Tsai

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Phase-change material Ge₂Sb₂Te₅ rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.

Original language	English
Pages (from-to)	12652-12657
Number of pages	6
Journal	Optics Express
Volume	19
Issue number	13
DOIs	https://doi.org/10.1364/OE.19.012652
State	Published - 20 Jun 2011

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title = "Fabrication of phase-change Ge2Sb2Te5 nano-rings",

abstract = "Phase-change material Ge2Sb2Te5 rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.",

author = "Chu, {Cheng Hung} and Tseng, {Ming Lun} and {Da Shiue}, Chiun and Chen, {Shuan Wei} and Chiang, {Hai Pang} and Masud Mansuripur and Tsai, {Din Ping}",

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AU - Chu, Cheng Hung

AU - Tseng, Ming Lun

AU - Da Shiue, Chiun

AU - Chen, Shuan Wei

AU - Chiang, Hai Pang

AU - Mansuripur, Masud

AU - Tsai, Din Ping

PY - 2011/6/20

Y1 - 2011/6/20

N2 - Phase-change material Ge2Sb2Te5 rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.

AB - Phase-change material Ge2Sb2Te5 rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.

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M3 - Article

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AN - SCOPUS:79959420557

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Fabrication of phase-change Ge₂Sb₂Te₅ nano-rings

Abstract

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