Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects

Cheng Wei Chou; Yung Chun Wu; Yuan Chun Wu; Ting Chang Chang; Po-Tsun Liu; Jen Chung Lou; Wen Jun Huang; Chun Yen Chang; Simon M. Sze

Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH₃ plasma passivation effects

Cheng Wei Chou^*, Yung Chun Wu, Yuan Chun Wu, Ting Chang Chang, Po-Tsun Liu, Jen Chung Lou, Wen Jun Huang, Chun Yen Chang, Simon M. Sze

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A pattern-dependent metal-induced lateral crystallized (PDMLC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMLC is simple with only four-mask process. After NH ₃ plasma passivation, the device performance was enhanced, including the high on/off current ratio (>10⁶), the high mobility (31.19 cm²/Vs), and the steep subthreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH₃ plasma passivation is superior to that of the counterpart without NH₃ plasma passivation. The NH ₃ plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen pile-up at SiO ₂/poly-Si interface.

Original language	English
Title of host publication	Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
Editors	H.P. David Shieh, F.C. Chen
Pages	517-519
Number of pages	3
State	Published - Feb 2005
Event	International Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan Duration: 21 Feb 2005 → 24 Feb 2005

Publication series

Name	International Display Manufacturing Conference and Exhibition, IDMC'05

Conference

Conference	International Display Manufacturing Conference and Exhibition, IDMC'05
Country/Territory	Japan
City	Taipei
Period	21/02/05 → 24/02/05

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Chou, C. W., Wu, Y. C., Wu, Y. C., Chang, T. C., Liu, P.-T., Lou, J. C., Huang, W. J., Chang, C. Y., & Sze, S. M. (2005). Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH₃ plasma passivation effects. In H. P. David Shieh, & F. C. Chen (Eds.), Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05 (pp. 517-519). (International Display Manufacturing Conference and Exhibition, IDMC'05).

Chou, Cheng Wei ; Wu, Yung Chun ; Wu, Yuan Chun et al. / Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH₃ plasma passivation effects. Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05. editor / H.P. David Shieh ; F.C. Chen. 2005. pp. 517-519 (International Display Manufacturing Conference and Exhibition, IDMC'05).

@inproceedings{7b649bc83ad64d54a95ce2662897d376,

title = "Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects",

abstract = "A pattern-dependent metal-induced lateral crystallized (PDMLC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMLC is simple with only four-mask process. After NH 3 plasma passivation, the device performance was enhanced, including the high on/off current ratio (>106), the high mobility (31.19 cm2/Vs), and the steep subthreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH3 plasma passivation is superior to that of the counterpart without NH3 plasma passivation. The NH 3 plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen pile-up at SiO 2/poly-Si interface.",

author = "Chou, {Cheng Wei} and Wu, {Yung Chun} and Wu, {Yuan Chun} and Chang, {Ting Chang} and Po-Tsun Liu and Lou, {Jen Chung} and Huang, {Wen Jun} and Chang, {Chun Yen} and Sze, {Simon M.}",

year = "2005",

month = feb,

language = "English",

isbn = "9572852221",

series = "International Display Manufacturing Conference and Exhibition, IDMC'05",

pages = "517--519",

editor = "{David Shieh}, H.P. and F.C. Chen",

booktitle = "Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05",

note = "International Display Manufacturing Conference and Exhibition, IDMC'05 ; Conference date: 21-02-2005 Through 24-02-2005",

}

Chou, CW, Wu, YC, Wu, YC, Chang, TC, Liu, P-T, Lou, JC, Huang, WJ, Chang, CY & Sze, SM 2005, Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH₃ plasma passivation effects. in HP David Shieh & FC Chen (eds), Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05. International Display Manufacturing Conference and Exhibition, IDMC'05, pp. 517-519, International Display Manufacturing Conference and Exhibition, IDMC'05, Taipei, Japan, 21/02/05.

Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH₃ plasma passivation effects. / Chou, Cheng Wei; Wu, Yung Chun; Wu, Yuan Chun et al.
Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05. ed. / H.P. David Shieh; F.C. Chen. 2005. p. 517-519 (International Display Manufacturing Conference and Exhibition, IDMC'05).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects

AU - Chou, Cheng Wei

AU - Wu, Yung Chun

AU - Wu, Yuan Chun

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Lou, Jen Chung

AU - Huang, Wen Jun

AU - Chang, Chun Yen

AU - Sze, Simon M.

PY - 2005/2

Y1 - 2005/2

N2 - A pattern-dependent metal-induced lateral crystallized (PDMLC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMLC is simple with only four-mask process. After NH 3 plasma passivation, the device performance was enhanced, including the high on/off current ratio (>106), the high mobility (31.19 cm2/Vs), and the steep subthreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH3 plasma passivation is superior to that of the counterpart without NH3 plasma passivation. The NH 3 plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen pile-up at SiO 2/poly-Si interface.

AB - A pattern-dependent metal-induced lateral crystallized (PDMLC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMLC is simple with only four-mask process. After NH 3 plasma passivation, the device performance was enhanced, including the high on/off current ratio (>106), the high mobility (31.19 cm2/Vs), and the steep subthreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH3 plasma passivation is superior to that of the counterpart without NH3 plasma passivation. The NH 3 plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen pile-up at SiO 2/poly-Si interface.

UR - http://www.scopus.com/inward/record.url?scp=33644638761&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33644638761

SN - 9572852221

SN - 9789572852224

T3 - International Display Manufacturing Conference and Exhibition, IDMC'05

SP - 517

EP - 519

BT - Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05

A2 - David Shieh, H.P.

A2 - Chen, F.C.

T2 - International Display Manufacturing Conference and Exhibition, IDMC'05

Y2 - 21 February 2005 through 24 February 2005

ER -

Chou CW, Wu YC, Wu YC, Chang TC, Liu PT, Lou JC et al. Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH₃ plasma passivation effects. In David Shieh HP, Chen FC, editors, Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05. 2005. p. 517-519. (International Display Manufacturing Conference and Exhibition, IDMC'05).

Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH₃ plasma passivation effects

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