Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure

P. H. Yeh; H. H. Wu; C. H. Yu; L. J. Chen; Po-Tsun Liu; C. H. Hsu; T. C. Chang

doi:10.1116/1.1913678

Fabrication of NiSi₂ nanocrystals embedded in SiO₂ with memory effect by oxidation of the amorphous Si/Ni/SiO₂ structure

P. H. Yeh^*, H. H. Wu, C. H. Yu, L. J. Chen, Po-Tsun Liu, C. H. Hsu, T. C. Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous SiNi SiO2 structure at 900 °C. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage for the samples. For dry oxidation at 800 °C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices.

Original language	English
Pages (from-to)	851-855
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	23
Issue number	4
DOIs	https://doi.org/10.1116/1.1913678
State	Published - Jul 2005

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abstract = "NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous SiNi SiO2 structure at 900 °C. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage for the samples. For dry oxidation at 800 °C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices.",

author = "Yeh, {P. H.} and Wu, {H. H.} and Yu, {C. H.} and Chen, {L. J.} and Po-Tsun Liu and Hsu, {C. H.} and Chang, {T. C.}",

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AU - Yeh, P. H.

AU - Wu, H. H.

AU - Yu, C. H.

AU - Chen, L. J.

AU - Liu, Po-Tsun

AU - Hsu, C. H.

AU - Chang, T. C.

PY - 2005/7

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N2 - NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous SiNi SiO2 structure at 900 °C. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage for the samples. For dry oxidation at 800 °C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices.

AB - NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous SiNi SiO2 structure at 900 °C. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage for the samples. For dry oxidation at 800 °C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices.

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IS - 4

ER -

Fabrication of NiSi₂ nanocrystals embedded in SiO₂ with memory effect by oxidation of the amorphous Si/Ni/SiO₂ structure

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