Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

Chih Yao Chang; Kuan Ju Wu; Yao Luen Shen; Tian Li Wu; Wei Hung Kuo; Suh Fang Lin; Chih Fang Huang

doi:10.1109/DRC52342.2021.9467154

Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

Chih Yao Chang, Kuan Ju Wu, Yao Luen Shen, Tian Li Wu, Wei Hung Kuo, Suh Fang Lin, Chih Fang Huang^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Original language	English
Title of host publication	2021 Device Research Conference, DRC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665412407
DOIs	https://doi.org/10.1109/DRC52342.2021.9467154
State	Published - 20 Jun 2021
Event	2021 Device Research Conference, DRC 2021 - Santa Barbara, United States Duration: 20 Jun 2021 → 23 Jun 2021

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2021-June
ISSN (Print)	1548-3770

Conference

Conference	2021 Device Research Conference, DRC 2021
Country/Territory	United States
City	Santa Barbara
Period	20/06/21 → 23/06/21

Access to Document

10.1109/DRC52342.2021.9467154

Cite this

Chang, C. Y., Wu, K. J., Shen, Y. L., Wu, T. L., Kuo, W. H., Lin, S. F., & Huang, C. F. (2021). Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted. In 2021 Device Research Conference, DRC 2021 Article 9467154 (Device Research Conference - Conference Digest, DRC; Vol. 2021-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC52342.2021.9467154

@inproceedings{ba118083fb3a4b0993e01e2e169b0304,

title = "Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted",

author = "Chang, \{Chih Yao\} and Wu, \{Kuan Ju\} and Shen, \{Yao Luen\} and Wu, \{Tian Li\} and Kuo, \{Wei Hung\} and Lin, \{Suh Fang\} and Huang, \{Chih Fang\}",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/DRC52342.2021.9467154",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2021 Device Research Conference, DRC 2021",

address = "美國",

note = "2021 Device Research Conference, DRC 2021 ; Conference date: 20-06-2021 Through 23-06-2021",

}

Chang, CY, Wu, KJ, Shen, YL, Wu, TL, Kuo, WH, Lin, SF & Huang, CF 2021, Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted. in 2021 Device Research Conference, DRC 2021., 9467154, Device Research Conference - Conference Digest, DRC, vol. 2021-June, Institute of Electrical and Electronics Engineers Inc., 2021 Device Research Conference, DRC 2021, Santa Barbara, United States, 20/06/21. https://doi.org/10.1109/DRC52342.2021.9467154

Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted. / Chang, Chih Yao; Wu, Kuan Ju; Shen, Yao Luen et al.
2021 Device Research Conference, DRC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9467154 (Device Research Conference - Conference Digest, DRC; Vol. 2021-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

AU - Chang, Chih Yao

AU - Wu, Kuan Ju

AU - Shen, Yao Luen

AU - Wu, Tian Li

AU - Kuo, Wei Hung

AU - Lin, Suh Fang

AU - Huang, Chih Fang

PY - 2021/6/20

Y1 - 2021/6/20

UR - https://www.scopus.com/pages/publications/85113854934

U2 - 10.1109/DRC52342.2021.9467154

DO - 10.1109/DRC52342.2021.9467154

M3 - Conference contribution

AN - SCOPUS:85113854934

T3 - Device Research Conference - Conference Digest, DRC

BT - 2021 Device Research Conference, DRC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 Device Research Conference, DRC 2021

Y2 - 20 June 2021 through 23 June 2021

ER -

Chang CY, Wu KJ, Shen YL, Wu TL, Kuo WH, Lin SF et al. Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted. In 2021 Device Research Conference, DRC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9467154. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC52342.2021.9467154

Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted

Publication series

Conference

Access to Document

Other files and links

Cite this