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Fabrication of intermediate mask for deep x-ray lithography
Jeng-Tzong Sheu
*
, M. H. Chiang
, S. Su
*
Corresponding author for this work
Institute of Biomedical Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
5
Scopus citations
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Keyphrases
Absorber
66%
Absorber Thickness
33%
Adhesion
33%
Angstrom
33%
Backside Etching
33%
Chromium
66%
Chromium Layer
33%
Electron Beam Lithography
33%
Free-standing Membrane
33%
Low Pressure Chemical Vapor Deposition (LPCVD)
33%
Low Stress
33%
Mask Fabrication
33%
Reactive Ion Etching
33%
Scanning Electron Microscope Image
33%
Silicon Nitride
33%
SiNx
33%
SiNx Film
33%
Stress Relief
33%
Trilayer
33%
Tungsten
33%
X-ray Lithography
100%
Zone Plate
100%
Material Science
Chromium
100%
Film
33%
Lithography
100%
Low Pressure Chemical Vapor Deposition
33%
Reactive Ion Etching
33%
Scanning Electron Microscopy
33%
Silicon
66%
Silicon Nitride
33%
Tungsten
33%
Engineering
Beam Lithography
50%
Chemical Vapor Deposition
50%
Chromium (Cr)
50%
Lithography
100%
Nitride
50%
Stress Relief
50%
Vapor Deposition
50%
Physics
Scanning Electron Microscopy
100%
Silicon Nitride
100%
Vapor Deposition
100%