Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo*, Y. H. Chang, Y. A. Chang, K. F. Tseng, L. H. Laih, S. C. Wang, Hsin-Chieh Yu, C. P. Sung, H. P. Yang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ∼0.4 mA, and slope efficiencies of ∼0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA) 1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.

Original languageEnglish
Article number06
Pages (from-to)50-57
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 6 May 2005
EventSemiconductor and Organic Optoelectronic Materials and Devices - Beijing, China
Duration: 9 Nov 200411 Nov 2004


  • High-speed electronics
  • InGaAsP/InGaP
  • Proton-implant
  • Strain-compensated
  • VCSELs


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