Abstract
A method was developed to fabricate ZnO thin-film transistors (TFTs) with submicrometer channel length. In this scheme, mature process techniques are used to form a suspending hardmask bridge on the wafer surface, which enables the subsequent construction of a TFT by the sequential deposition of gate oxide, ZnO channel layer, and Al source/drain contacts. Excellent electrical characteristics were demonstrated by the fabricated ZnO TFTs that show high ON/OFF current ratio (> 109), low subthreshold swing (89 mV/decade), and high field-effect mobility (41 cm2 V s). Very small variation in the device characteristics is also demonstrated.
Original language | English |
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Article number | 6579637 |
Pages (from-to) | 1160-1162 |
Number of pages | 3 |
Journal | Ieee Electron Device Letters |
Volume | 34 |
Issue number | 9 |
DOIs | |
State | Published - 2013 |
Keywords
- Metal oxide
- ZnO
- shadow mask
- submicrometer
- thin-film transistors