Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

C. C. Chen; Yew-Chuhg Wu; T. F. Tung; H. Y. Wu

doi:10.1149/1.3375627

Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

C. C. Chen, Yew-Chuhg Wu, T. F. Tung, H. Y. Wu

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publication	New Materials, Processes, and Equipment
Pages	401-404
Number of pages	4
Edition	1
DOIs	https://doi.org/10.1149/1.3375627
State	Published - 30 Dec 2010
Event	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada Duration: 26 Apr 2010 → 27 Apr 2010

Publication series

Name	ECS Transactions
Number	1
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
Country/Territory	Canada
City	Vancouver, BC
Period	26/04/10 → 27/04/10

Access to Document

10.1149/1.3375627

Cite this

@inproceedings{aab03192c98b4f7ca96af25a2cc972c7,

title = "Fabrication of high electrical performance NILC-TFTs using FSG buffer layer",

abstract = "Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.",

author = "Chen, {C. C.} and Yew-Chuhg Wu and Tung, {T. F.} and Wu, {H. Y.}",

year = "2010",

month = dec,

day = "30",

doi = "10.1149/1.3375627",

language = "English",

isbn = "9781566777919",

series = "ECS Transactions",

number = "1",

pages = "401--404",

booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6",

edition = "1",

note = "Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting ; Conference date: 26-04-2010 Through 27-04-2010",

}

Chen, CC, Wu, Y-C, Tung, TF & Wu, HY 2010, Fabrication of high electrical performance NILC-TFTs using FSG buffer layer. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 28, pp. 401-404, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting, Vancouver, BC, Canada, 26/04/10. https://doi.org/10.1149/1.3375627

Fabrication of high electrical performance NILC-TFTs using FSG buffer layer. / Chen, C. C.; Wu, Yew-Chuhg; Tung, T. F. et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. 2010. p. 401-404 (ECS Transactions; Vol. 28, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

AU - Chen, C. C.

AU - Wu, Yew-Chuhg

AU - Tung, T. F.

AU - Wu, H. Y.

PY - 2010/12/30

Y1 - 2010/12/30

N2 - Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.

AB - Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.

UR - http://www.scopus.com/inward/record.url?scp=78650537193&partnerID=8YFLogxK

U2 - 10.1149/1.3375627

DO - 10.1149/1.3375627

M3 - Conference contribution

AN - SCOPUS:78650537193

SN - 9781566777919

T3 - ECS Transactions

SP - 401

EP - 404

BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6

T2 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting

Y2 - 26 April 2010 through 27 April 2010

ER -

Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this