Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

Tzu Chieh Hong, Wen Hsiang Lu, Yeong Her Wang, Jiun Yun Li, Yao Jen Lee*, Tien Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Germanium-tin (GeSn) epitaxy layer was prepared on an 8-in SOI wafer with a Ge buffer layer. The etching rates of different solutions for the GeSn layer were investigated. The ammonia peroxide mixture can remove the Ge buffer layer with high efficiency and selectivity to the GeSn layer. Heated ammonia solution is able to etch the Si layer without damaging the GeSn layer significantly. The two-step etching process developed in this study is conducive to achieving GeSn nanowires (NWs) by selectively etching the Ge buffer and Si bottom layers. GeSn NWFETs were fabricated and measured. The strain of the GeSn NW channels is preserved with the optimized fabrication process proposed in this study.

Original languageEnglish
Pages (from-to)2028-2033
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume70
Issue number4
DOIs
StatePublished - 1 Apr 2023

Keywords

  • Ge
  • germanium-tin (GeSn)
  • nanowire (NW)
  • selective etching

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