Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures

Chieh Lo, Shu Chieh Chang, Kun Tao Lin, Chung Kuang Chen, Chen Feng Chang, Feng Shuo Zhang, Zong Han Lu, Tien Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We fabricated FeRAM and FeFET with a bilayer HfxZr1-xO2 (HZO), which comprises 5-nm-thick antiferroelectric HZO and 5-nm-thick ferroelectric HZO. Higher orthorhombic phase and large grain size were shown in grazing-incidence x-ray diffraction and TEM results, respectively. By using low ALD temperature, the leakage current ( $ < 3\times 10^{-{5}}$ A/cm2 under ±2V), gate control ability, the memory window (>1.5V) andthe endurance (107 cycles) have been improved. These results suggest that a low atomic layer deposition temperature is a promising process for use in non-volatile memory devices.

Original languageEnglish
Pages (from-to)883-886
Number of pages4
JournalIeee Electron Device Letters
Volume44
Issue number6
DOIs
StatePublished - 1 Jun 2023

Keywords

  • Antiferroelectric
  • HfZrO
  • atomic layer deposition temperature
  • ferroelectric
  • grain boundary
  • grain size

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