Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

Pei-Wen Li; W. M. Liao; David M.T. Kuo; S. W. Lin; P. S. Chen; S. C. Lu; M. J. Tsai

doi:10.1063/1.1785870

Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

Pei-Wen Li^*, W. M. Liao, David M.T. Kuo, S. W. Lin, P. S. Chen, S. C. Lu, M. J. Tsai

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

The fabrication of a germanium quantum-dot (QD) single-electron transistor using complementary metal-oxide-semiconductor-compatible method was proposed. The tunneling currents through the Ge QD were simulated by the Anderson model with two energy levels. The total capacitance of the dot was calculated to be 2.13 aF. The analysis of the current-voltage characteristics indicated that the single-electron addition energy of the Ge QD was about 125 meV.

Original language	English
Pages (from-to)	1532-1534
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	9
DOIs	https://doi.org/10.1063/1.1785870
State	Published - 30 Aug 2004

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title = "Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature",

abstract = "The fabrication of a germanium quantum-dot (QD) single-electron transistor using complementary metal-oxide-semiconductor-compatible method was proposed. The tunneling currents through the Ge QD were simulated by the Anderson model with two energy levels. The total capacitance of the dot was calculated to be 2.13 aF. The analysis of the current-voltage characteristics indicated that the single-electron addition energy of the Ge QD was about 125 meV.",

author = "Pei-Wen Li and Liao, {W. M.} and Kuo, {David M.T.} and Lin, {S. W.} and Chen, {P. S.} and Lu, {S. C.} and Tsai, {M. J.}",

year = "2004",

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AU - Li, Pei-Wen

AU - Liao, W. M.

AU - Kuo, David M.T.

AU - Lin, S. W.

AU - Chen, P. S.

AU - Lu, S. C.

AU - Tsai, M. J.

PY - 2004/8/30

Y1 - 2004/8/30

N2 - The fabrication of a germanium quantum-dot (QD) single-electron transistor using complementary metal-oxide-semiconductor-compatible method was proposed. The tunneling currents through the Ge QD were simulated by the Anderson model with two energy levels. The total capacitance of the dot was calculated to be 2.13 aF. The analysis of the current-voltage characteristics indicated that the single-electron addition energy of the Ge QD was about 125 meV.

AB - The fabrication of a germanium quantum-dot (QD) single-electron transistor using complementary metal-oxide-semiconductor-compatible method was proposed. The tunneling currents through the Ge QD were simulated by the Anderson model with two energy levels. The total capacitance of the dot was calculated to be 2.13 aF. The analysis of the current-voltage characteristics indicated that the single-electron addition energy of the Ge QD was about 125 meV.

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U2 - 10.1063/1.1785870

DO - 10.1063/1.1785870

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

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