Fabrication and electrical transport properties of nickel monosilicide nanowires

Jeng-Tzong Sheu; S. P. Yeh; S. T. Tsai; C. H. Lien

doi:10.1109/NANO.2005.1500647

Fabrication and electrical transport properties of nickel monosilicide nanowires

Jeng-Tzong Sheu^*, S. P. Yeh, S. T. Tsai, C. H. Lien

^*Corresponding author for this work

Institute of Nonotechnology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin Nickel films (∼50nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N₂ ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Pages	47-50
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2005.1500647
State	Published - 1 Dec 2005
Event	2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan Duration: 11 Jul 2005 → 15 Jul 2005

Publication series

Name	2005 5th IEEE Conference on Nanotechnology
Volume	2

Conference

Conference	2005 5th IEEE Conference on Nanotechnology
Country/Territory	Japan
City	Nagoya
Period	11/07/05 → 15/07/05

Keywords

Nickel silicide nanowires (NSNWs)
Rapid thermal annealing (RTA)
Scanning probe lithography (SPL)
Silicon nanowires (SINWs)
Silicon on Insulator (SOI)
Tetramethylammonium hydroxide (TMAH)

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10.1109/NANO.2005.1500647

Cite this

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title = "Fabrication and electrical transport properties of nickel monosilicide nanowires",

abstract = "Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin Nickel films (∼50nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N2 ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared.",

keywords = "Nickel silicide nanowires (NSNWs), Rapid thermal annealing (RTA), Scanning probe lithography (SPL), Silicon nanowires (SINWs), Silicon on Insulator (SOI), Tetramethylammonium hydroxide (TMAH)",

author = "Jeng-Tzong Sheu and Yeh, {S. P.} and Tsai, {S. T.} and Lien, {C. H.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/NANO.2005.1500647",

language = "English",

isbn = "0780391993",

series = "2005 5th IEEE Conference on Nanotechnology",

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note = "2005 5th IEEE Conference on Nanotechnology ; Conference date: 11-07-2005 Through 15-07-2005",

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TY - GEN

T1 - Fabrication and electrical transport properties of nickel monosilicide nanowires

AU - Sheu, Jeng-Tzong

AU - Yeh, S. P.

AU - Tsai, S. T.

AU - Lien, C. H.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin Nickel films (∼50nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N2 ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared.

AB - Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin Nickel films (∼50nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N2 ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared.

KW - Nickel silicide nanowires (NSNWs)

KW - Rapid thermal annealing (RTA)

KW - Scanning probe lithography (SPL)

KW - Silicon nanowires (SINWs)

KW - Silicon on Insulator (SOI)

KW - Tetramethylammonium hydroxide (TMAH)

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U2 - 10.1109/NANO.2005.1500647

DO - 10.1109/NANO.2005.1500647

M3 - Conference contribution

AN - SCOPUS:33746913151

SN - 0780391993

SN - 9780780391994

T3 - 2005 5th IEEE Conference on Nanotechnology

SP - 47

EP - 50

BT - 2005 5th IEEE Conference on Nanotechnology

T2 - 2005 5th IEEE Conference on Nanotechnology

Y2 - 11 July 2005 through 15 July 2005

ER -

Fabrication and electrical transport properties of nickel monosilicide nanowires

Abstract

Publication series

Conference

Keywords

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