Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain

Cheng Kuei Lee, K. M. Chen, G. W. Huang, Pei Wen Li, Horng Chih Lin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report detailed fabrication and characterization of poly-Si thin-film transistors (TFTs) with T-shaped gate (T-gate) and lightly-doped drain (LDD) structures. The formation of the LDD underneath the wings of a T-gate primarily relies on the shadowing of implanted dopants during the implantation of source and drain. Therefore, the fabrication of LDD structures in our proposed T-gate poly-Si TFTs can save a number of process steps as compared to conventional poly-Si TFTs with LDD structures. Our fabricated T-gated poly-Si TFTs with LDD structures not only exhibit suppressed off-state leakage current but also show a significant improvement in on-state current as compared to that of conventional poly-Si TFTs with the same top-gate dimension.

Original languageEnglish
Article numberSC1009
JournalJapanese journal of applied physics
Volume62
Issue numberSC
DOIs
StatePublished - 1 Apr 2023

Keywords

  • air spacers
  • lightly doped drain
  • poly-Si
  • T-gate
  • thin-film transistor

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