Fabrication and characterization of green resonant-cavity light-emitting diodes prepared by wafer transfer technologies

Shih Yung Huang; Ray Hua Horng

doi:10.1142/9781786343192_0009

Fabrication and characterization of green resonant-cavity light-emitting diodes prepared by wafer transfer technologies

Shih Yung Huang, Ray Hua Horng

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Green resonant cavity light-emitting diodes (RCLEDs) were demonstrated using a combination of wafer transfer and laser lift-off techniques. RCLED fabricated through all dielectric DBRs, hybrid mirrors, H+ implantation, and vertical electrodes structures. The chapter discussed the effects of the Fabry-Pérot cavity involving the spectral purity, superior emission directionality, inherent temperature stability, and enhanced light extraction efficiency. Moreover, the RCLEDs for plastic optical fiber communication applications are also reported.

Original language	English
Title of host publication	Iii-nitride Materials, Devices And Nano-structures
Publisher	World Scientific Publishing Co.
Pages	303-339
Number of pages	37
ISBN (Electronic)	9781786343192
DOIs	https://doi.org/10.1142/9781786343192_0009
State	Published - 20 Apr 2017

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abstract = "Green resonant cavity light-emitting diodes (RCLEDs) were demonstrated using a combination of wafer transfer and laser lift-off techniques. RCLED fabricated through all dielectric DBRs, hybrid mirrors, H+ implantation, and vertical electrodes structures. The chapter discussed the effects of the Fabry-P{\'e}rot cavity involving the spectral purity, superior emission directionality, inherent temperature stability, and enhanced light extraction efficiency. Moreover, the RCLEDs for plastic optical fiber communication applications are also reported.",

author = "Huang, {Shih Yung} and Horng, {Ray Hua}",

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N2 - Green resonant cavity light-emitting diodes (RCLEDs) were demonstrated using a combination of wafer transfer and laser lift-off techniques. RCLED fabricated through all dielectric DBRs, hybrid mirrors, H+ implantation, and vertical electrodes structures. The chapter discussed the effects of the Fabry-Pérot cavity involving the spectral purity, superior emission directionality, inherent temperature stability, and enhanced light extraction efficiency. Moreover, the RCLEDs for plastic optical fiber communication applications are also reported.

AB - Green resonant cavity light-emitting diodes (RCLEDs) were demonstrated using a combination of wafer transfer and laser lift-off techniques. RCLED fabricated through all dielectric DBRs, hybrid mirrors, H+ implantation, and vertical electrodes structures. The chapter discussed the effects of the Fabry-Pérot cavity involving the spectral purity, superior emission directionality, inherent temperature stability, and enhanced light extraction efficiency. Moreover, the RCLEDs for plastic optical fiber communication applications are also reported.

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BT - Iii-nitride Materials, Devices And Nano-structures

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ER -

Fabrication and characterization of green resonant-cavity light-emitting diodes prepared by wafer transfer technologies

Abstract

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