TY - CHAP
T1 - Fabrication and characterization of green resonant-cavity light-emitting diodes prepared by wafer transfer technologies
AU - Huang, Shih Yung
AU - Horng, Ray Hua
N1 - Publisher Copyright:
© 2017 by World Scientific Publishing Europe Ltd.
PY - 2017/4/20
Y1 - 2017/4/20
N2 - Green resonant cavity light-emitting diodes (RCLEDs) were demonstrated using a combination of wafer transfer and laser lift-off techniques. RCLED fabricated through all dielectric DBRs, hybrid mirrors, H+ implantation, and vertical electrodes structures. The chapter discussed the effects of the Fabry-Pérot cavity involving the spectral purity, superior emission directionality, inherent temperature stability, and enhanced light extraction efficiency. Moreover, the RCLEDs for plastic optical fiber communication applications are also reported.
AB - Green resonant cavity light-emitting diodes (RCLEDs) were demonstrated using a combination of wafer transfer and laser lift-off techniques. RCLED fabricated through all dielectric DBRs, hybrid mirrors, H+ implantation, and vertical electrodes structures. The chapter discussed the effects of the Fabry-Pérot cavity involving the spectral purity, superior emission directionality, inherent temperature stability, and enhanced light extraction efficiency. Moreover, the RCLEDs for plastic optical fiber communication applications are also reported.
UR - http://www.scopus.com/inward/record.url?scp=85124933318&partnerID=8YFLogxK
U2 - 10.1142/9781786343192_0009
DO - 10.1142/9781786343192_0009
M3 - Chapter
AN - SCOPUS:85124933318
SP - 303
EP - 339
BT - Iii-nitride Materials, Devices And Nano-structures
PB - World Scientific Publishing Co.
ER -