Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap

Chia Wei Hsu; Chia Hao Kuo; Hsing Hui Hsu; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1109/NEMS.2011.6017356

Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap

Chia Wei Hsu^*, Chia Hao Kuo, Hsing Hui Hsu, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time- controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.

Original language	English
Title of host publication	NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
Pages	313-316
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2011.6017356
State	Published - 2011
Event	6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan Duration: 20 Feb 2011 → 23 Feb 2011

Publication series

Name	NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Conference

Conference	6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
Country/Territory	Taiwan
City	Kaohsiung
Period	20/02/11 → 23/02/11

Access to Document

10.1109/NEMS.2011.6017356

Cite this

Hsu, C. W., Kuo, C. H., Hsu, H. H., Lin, H.-C., & Huang, T. Y. (2011). Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap. In NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (pp. 313-316). Article 6017356 (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems). https://doi.org/10.1109/NEMS.2011.6017356

Hsu, Chia Wei ; Kuo, Chia Hao ; Hsu, Hsing Hui et al. / Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap. NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. pp. 313-316 (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems).

@inproceedings{0432f2c75dd14a8e99ba845c10b1765b,

title = "Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap",

abstract = "In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time- controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.",

author = "Hsu, {Chia Wei} and Kuo, {Chia Hao} and Hsu, {Hsing Hui} and Horng-Chih Lin and Huang, {Tiao Yuan}",

year = "2011",

doi = "10.1109/NEMS.2011.6017356",

language = "English",

isbn = "9781612847757",

series = "NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems",

pages = "313--316",

booktitle = "NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems",

note = "6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 ; Conference date: 20-02-2011 Through 23-02-2011",

}

Hsu, CW, Kuo, CH, Hsu, HH, Lin, H-C & Huang, TY 2011, Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap. in NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems., 6017356, NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, pp. 313-316, 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011, Kaohsiung, Taiwan, 20/02/11. https://doi.org/10.1109/NEMS.2011.6017356

Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap. / Hsu, Chia Wei; Kuo, Chia Hao; Hsu, Hsing Hui et al.
NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. p. 313-316 6017356 (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap

AU - Hsu, Chia Wei

AU - Kuo, Chia Hao

AU - Hsu, Hsing Hui

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2011

Y1 - 2011

N2 - In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time- controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.

AB - In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time- controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.

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U2 - 10.1109/NEMS.2011.6017356

DO - 10.1109/NEMS.2011.6017356

M3 - Conference contribution

AN - SCOPUS:80053296409

SN - 9781612847757

T3 - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

SP - 313

EP - 316

BT - NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

T2 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011

Y2 - 20 February 2011 through 23 February 2011

ER -

Hsu CW, Kuo CH, Hsu HH, Lin HC, Huang TY. Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap. In NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. 2011. p. 313-316. 6017356. (NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems). doi: 10.1109/NEMS.2011.6017356

Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap

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