Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels

Tuan Kai Su; Tzu I. Tsai; Chun Jung Su; Horng-Chih Lin; Tiao Yuan Huang

doi:10.1109/INEC.2011.5991721

Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels

Tuan Kai Su^*, Tzu I. Tsai, Chun Jung Su, Horng-Chih Lin, Tiao Yuan Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, we demonstrate a junctionless (JL) polysilicon-oxide- nitride-oxide-silicon (SONOS) poly-Si nanowire (NW) transistor whose source/drain (S/D) and channel regions are of the same doping type and concentration. Due to the higher carrier concentration in the channel, the JL device exhibits better drive current and program efficiency than its counterpart with undoped channel. Memory reliability characteristics such as data retention and endurance are also discussed.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991721
State	Published - 26 Sep 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 21 Jun 2011 → 24 Jun 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Conference

Conference	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	21/06/11 → 24/06/11

Keywords

junctionless
nanowire
SONOS

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10.1109/INEC.2011.5991721

Cite this

@inproceedings{bc68aad9a41b4de5a23a62a331b088fd,

title = "Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels",

abstract = "In this paper, we demonstrate a junctionless (JL) polysilicon-oxide- nitride-oxide-silicon (SONOS) poly-Si nanowire (NW) transistor whose source/drain (S/D) and channel regions are of the same doping type and concentration. Due to the higher carrier concentration in the channel, the JL device exhibits better drive current and program efficiency than its counterpart with undoped channel. Memory reliability characteristics such as data retention and endurance are also discussed.",

keywords = "junctionless, nanowire, SONOS",

author = "Su, {Tuan Kai} and Tsai, {Tzu I.} and Su, {Chun Jung} and Horng-Chih Lin and Huang, {Tiao Yuan}",

year = "2011",

month = sep,

day = "26",

doi = "10.1109/INEC.2011.5991721",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

Su, TK, Tsai, TI, Su, CJ, Lin, H-C & Huang, TY 2011, Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991721, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 21/06/11. https://doi.org/10.1109/INEC.2011.5991721

Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels. / Su, Tuan Kai; Tsai, Tzu I.; Su, Chun Jung et al.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991721 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels

AU - Su, Tuan Kai

AU - Tsai, Tzu I.

AU - Su, Chun Jung

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

PY - 2011/9/26

Y1 - 2011/9/26

N2 - In this paper, we demonstrate a junctionless (JL) polysilicon-oxide- nitride-oxide-silicon (SONOS) poly-Si nanowire (NW) transistor whose source/drain (S/D) and channel regions are of the same doping type and concentration. Due to the higher carrier concentration in the channel, the JL device exhibits better drive current and program efficiency than its counterpart with undoped channel. Memory reliability characteristics such as data retention and endurance are also discussed.

AB - In this paper, we demonstrate a junctionless (JL) polysilicon-oxide- nitride-oxide-silicon (SONOS) poly-Si nanowire (NW) transistor whose source/drain (S/D) and channel regions are of the same doping type and concentration. Due to the higher carrier concentration in the channel, the JL device exhibits better drive current and program efficiency than its counterpart with undoped channel. Memory reliability characteristics such as data retention and endurance are also discussed.

KW - junctionless

KW - nanowire

KW - SONOS

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U2 - 10.1109/INEC.2011.5991721

DO - 10.1109/INEC.2011.5991721

M3 - Conference contribution

AN - SCOPUS:80053016601

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels

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Keywords

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