Extraction and Simulation with time dependent Vth shift model for IGZO panel

Zhongyuan Wu, Kun Cao, Longyan Wang, Jingwen Yin, Quanhu Li, Yongqian Li, Cuili Gai, Baoxia Zhang, Gang Wang, Scott Lin, Chi Wei Wang, Leon Huang, You Pang Wei, Po-Tsun Liu

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


The impact of stress effect to the performance of an IGZO panel is discussed in this paper. Depart from conventional method of observing the threshold voltage (Vth) shift, the time dependency of serial ID-VG test is included in building an accurate Vth shift model. The model can be used to simulate the IGZO TFT current change under fixed bias for aiding the circuit design and optimization.

Original languageEnglish
Pages (from-to)1184-1187
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Issue numberBook 3
StatePublished - 1 Jun 2015
Event2015 SID International Symposium - San Jose, United States
Duration: 2 Jun 20153 Jun 2015


  • Model
  • V shift


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