Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer

Yi Lin Tsai, Sheng Kai Huang, Huang Hsiung Huang, Shu Mei Yang, Kai Ling Liang, Wei Hung Kuo, Yen Hsiang Fang, Chih I. Wu, Shou Wei Wang, Hsiang Yun Shih, Zhiyu Xu, Minkyu Cho, Shyh Chiang Shen, Chien Chung Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.

Original languageEnglish
Article number9256288
Number of pages10
JournalIEEE Photonics Journal
Volume12
Issue number6
DOIs
StatePublished - Dec 2020

Keywords

  • Arrhenius plot
  • GaN
  • leakage current
  • low temperature current-voltage characterization
  • micro LEDs
  • Ultra-violet emission

Fingerprint

Dive into the research topics of 'Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer'. Together they form a unique fingerprint.

Cite this