Exploration and characterization of the memcapacitor and memristor properties of Ni-DNA nanowire devices

Hsueh Liang Chu, Jian Jhong Lai, Li Ying Wu, Shen Lin Chang, Chia Ming Liu, Wen-Bin Jian*, Yu-Chang Chen, Chiun-Jye Yuan, Tai Sing Wu, Yun Liang Soo, Massimiliano DI Ventra, Chia-Ching Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A 2-μm-long Ni ion-chelated DNA molecule (Ni-DNA) was found for the first time to possess both memcapacitor and memristor properties; this Ni-DNA molecule is known as a dual memory circuit element (memelement). As a memelement, the state of impedance on Ni-DNA is proportional to the unit number of Ni ions containing a base pair complex (Ni-bp), which is determined by the previously applied external voltage. Interestingly, the impedances of Ni-DNA change in response to a change in the sweeping frequencies of the external bias. Our simulation results also indicate that changes in the effective resistance and capacitance of Ni-bp may be attributed to changes in the Ni ion redox species in the Ni-bp of a Ni-DNA nanowire. Therefore, the working mechanism of a nanowire-type memcapacitor and memristor is revealed. In summary, the Ni-DNA nanowire is shown to be a multi-dimensional memory device, whose memory state depends on the length of DNA and applied external voltages/frequencies.

Original languageEnglish
Article numbere430
Pages (from-to)1-7
Number of pages7
JournalNPG Asia Materials
Volume9
Issue number9
DOIs
StatePublished - 1 Sep 2017

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