Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

Yun Yan Chung; Chi Feng Li; Chao Ting Lin; Yen Teng Ho; Chao Hsin Chien

doi:10.1109/LED.2019.2935538

Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

Yun Yan Chung, Chi Feng Li, Chao Ting Lin, Yen Teng Ho, Chao Hsin Chien

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This study determined the top (vertical) and edge (horizontal) resistivities of metal–MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, ρC_edge, was almost two orders of magnitude lower than the top contact resistivity, ρC_top. Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal–two-dimensional material contact.

Original language	English
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2019.2935538
State	Accepted/In press - 1 Jan 2019

Keywords

edge contact resistivity
metal–2D material contact
MoS2
Nb-doped
TLM
TMD
two-step sulfurization

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10.1109/LED.2019.2935538

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title = "Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement",

abstract = "This study determined the top (vertical) and edge (horizontal) resistivities of metal–MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, ρC_edge, was almost two orders of magnitude lower than the top contact resistivity, ρC_top. Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal–two-dimensional material contact.",

keywords = "edge contact resistivity, metal–2D material contact, MoS2, Nb-doped, TLM, TMD, two-step sulfurization",

author = "Chung, {Yun Yan} and Li, {Chi Feng} and Lin, {Chao Ting} and Ho, {Yen Teng} and Chien, {Chao Hsin}",

year = "2019",

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doi = "10.1109/LED.2019.2935538",

language = "English",

journal = "IEEE Electron Device Letters",

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T1 - Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

AU - Chung, Yun Yan

AU - Li, Chi Feng

AU - Lin, Chao Ting

AU - Ho, Yen Teng

AU - Chien, Chao Hsin

PY - 2019/1/1

Y1 - 2019/1/1

N2 - This study determined the top (vertical) and edge (horizontal) resistivities of metal–MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, ρC_edge, was almost two orders of magnitude lower than the top contact resistivity, ρC_top. Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal–two-dimensional material contact.

AB - This study determined the top (vertical) and edge (horizontal) resistivities of metal–MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, ρC_edge, was almost two orders of magnitude lower than the top contact resistivity, ρC_top. Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal–two-dimensional material contact.

KW - edge contact resistivity

KW - metal–2D material contact

KW - MoS2

KW - Nb-doped

KW - TLM

KW - TMD

KW - two-step sulfurization

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DO - 10.1109/LED.2019.2935538

M3 - Article

AN - SCOPUS:85070940468

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

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Keywords

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