Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Chung Chun Hsu; Wei Chun Chi; Yi He Tsai; Chen Han Chou; Che Wei Chen; Hung Pin Chien; Shang Shiun Chuang; Guang Li Luo; Yao Jen Lee; Chao Hsin Chien

doi:10.1109/TED.2016.2570284

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Chung Chun Hsu, Wei Chun Chi, Yi He Tsai, Chen Han Chou, Che Wei Chen, Hung Pin Chien, Shang Shiun Chuang, Guang Li Luo, Yao Jen Lee, Chao Hsin Chien^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering and MWA. We clarified the phenomena of thermal reaction and diffusion for forming ternary-phase alloys using MWA properties such as thermal dynamics and ionic transportation. The ternary-phase NiGePt alloy is crucial for improving the off-leakage current of the junction. A lower process temperature is beneficial for eliminating surface roughness and reducing alloy agglomeration of the Schottky contact S/D. Consequently, the fabricated NiGePt/n-Ge Schottky junction exhibited a high effective barrier height (Φ_Bn) of 0.59 eV, resulting in a high junction current ratio of more than 10⁵ at an applied voltage of /V_a/ = 1 V. In addition, we exploited the advantages of low-temperature microwave annealing to fabricate the pMOSFET, which includes a GeO₂ passivation layer and a Schottky S/D. Our ternary Schottky Ge pMOSFET ( L = 4 μm) exhibited high I_ONI_OFF ratios of approximately 3.7 × 10³ (I_D) and 1.3 × 10⁵ (I_S) and a moderate subthreshold swing of 126 mV/dec.

Original language	English
Article number	7484321
Pages (from-to)	2714-2721
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	7
DOIs	https://doi.org/10.1109/TED.2016.2570284
State	Published - 1 Jul 2016

Keywords

Crystallinity
NiGePt
Schottky barrier height (SBH)
microwave-activated annealing (MWA)
p-channel MOSFET (pMOSFET)
ternary-phase alloy

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10.1109/TED.2016.2570284

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@article{7c08eda95563487799dfa7e708d8eb1d,

title = "Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs",

abstract = "This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering and MWA. We clarified the phenomena of thermal reaction and diffusion for forming ternary-phase alloys using MWA properties such as thermal dynamics and ionic transportation. The ternary-phase NiGePt alloy is crucial for improving the off-leakage current of the junction. A lower process temperature is beneficial for eliminating surface roughness and reducing alloy agglomeration of the Schottky contact S/D. Consequently, the fabricated NiGePt/n-Ge Schottky junction exhibited a high effective barrier height (ΦBn) of 0.59 eV, resulting in a high junction current ratio of more than 105 at an applied voltage of /Va/ = 1 V. In addition, we exploited the advantages of low-temperature microwave annealing to fabricate the pMOSFET, which includes a GeO2 passivation layer and a Schottky S/D. Our ternary Schottky Ge pMOSFET ( L = 4 μm) exhibited high IONIOFF ratios of approximately 3.7 × 103 (ID) and 1.3 × 105 (IS) and a moderate subthreshold swing of 126 mV/dec.",

keywords = "Crystallinity, NiGePt, Schottky barrier height (SBH), microwave-activated annealing (MWA), p-channel MOSFET (pMOSFET), ternary-phase alloy",

author = "Hsu, {Chung Chun} and Chi, {Wei Chun} and Tsai, {Yi He} and Chou, {Chen Han} and Chen, {Che Wei} and Chien, {Hung Pin} and Chuang, {Shang Shiun} and Luo, {Guang Li} and Lee, {Yao Jen} and Chien, {Chao Hsin}",

year = "2016",

month = jul,

day = "1",

doi = "10.1109/TED.2016.2570284",

language = "English",

volume = "63",

pages = "2714--2721",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "7",

}

TY - JOUR

T1 - Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

AU - Hsu, Chung Chun

AU - Chi, Wei Chun

AU - Tsai, Yi He

AU - Chou, Chen Han

AU - Chen, Che Wei

AU - Chien, Hung Pin

AU - Chuang, Shang Shiun

AU - Luo, Guang Li

AU - Lee, Yao Jen

AU - Chien, Chao Hsin

PY - 2016/7/1

Y1 - 2016/7/1

N2 - This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering and MWA. We clarified the phenomena of thermal reaction and diffusion for forming ternary-phase alloys using MWA properties such as thermal dynamics and ionic transportation. The ternary-phase NiGePt alloy is crucial for improving the off-leakage current of the junction. A lower process temperature is beneficial for eliminating surface roughness and reducing alloy agglomeration of the Schottky contact S/D. Consequently, the fabricated NiGePt/n-Ge Schottky junction exhibited a high effective barrier height (ΦBn) of 0.59 eV, resulting in a high junction current ratio of more than 105 at an applied voltage of /Va/ = 1 V. In addition, we exploited the advantages of low-temperature microwave annealing to fabricate the pMOSFET, which includes a GeO2 passivation layer and a Schottky S/D. Our ternary Schottky Ge pMOSFET ( L = 4 μm) exhibited high IONIOFF ratios of approximately 3.7 × 103 (ID) and 1.3 × 105 (IS) and a moderate subthreshold swing of 126 mV/dec.

AB - This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering and MWA. We clarified the phenomena of thermal reaction and diffusion for forming ternary-phase alloys using MWA properties such as thermal dynamics and ionic transportation. The ternary-phase NiGePt alloy is crucial for improving the off-leakage current of the junction. A lower process temperature is beneficial for eliminating surface roughness and reducing alloy agglomeration of the Schottky contact S/D. Consequently, the fabricated NiGePt/n-Ge Schottky junction exhibited a high effective barrier height (ΦBn) of 0.59 eV, resulting in a high junction current ratio of more than 105 at an applied voltage of /Va/ = 1 V. In addition, we exploited the advantages of low-temperature microwave annealing to fabricate the pMOSFET, which includes a GeO2 passivation layer and a Schottky S/D. Our ternary Schottky Ge pMOSFET ( L = 4 μm) exhibited high IONIOFF ratios of approximately 3.7 × 103 (ID) and 1.3 × 105 (IS) and a moderate subthreshold swing of 126 mV/dec.

KW - Crystallinity

KW - NiGePt

KW - Schottky barrier height (SBH)

KW - microwave-activated annealing (MWA)

KW - p-channel MOSFET (pMOSFET)

KW - ternary-phase alloy

UR - http://www.scopus.com/inward/record.url?scp=84973573546&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2570284

DO - 10.1109/TED.2016.2570284

M3 - Article

AN - SCOPUS:84973573546

SN - 0018-9383

VL - 63

SP - 2714

EP - 2721

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

IS - 7

M1 - 7484321

ER -

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

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