Experimental Demonstration of Stacked Gate-All-Around Poly-Si Nanowires Negative Capacitance FETs with Internal Gate Featuring Seed Layer and Free of Post-Metal Annealing Process
Shen Yang Lee, Han Wei Chen, Chiuan Huei Shen, Po Yi Kuo, Chun Chih Chung, Yu En Huang, Hsin Yu Chen, Tien Sheng Chao*
Research output: Contribution to journal › Article › peer-review
29Scopus
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