Abstract
For the first time, two-layer stacked nanowire gate-all-around (GAA) negative capacitance (NC) field-effect transistors (FETs) with an ultrasmall poly-Si channel that has a size of 5.3×9 nm2 and a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) are experimentally demonstrated. FETs exhibit a remarkable Ion-Ioff ratio of more than 108. We demonstrated stacked channels, double layers, GAA NC-FET with a threshold voltage (VTH) of 0.61 V, and a superior subthreshold behavior with an average and minimum sub-VTH slope of 43.85 and 26.84 mV/dec, respectively. An additional ZrO2 seed layer was inserted under the Hf1-x ZrxO2 layer to improve ferroelectric crystallinity. Thus, the conventional crystallization annealing step can be omitted due to the presence of the orthorhombic phase (o-phase) before further post-metal annealing (PMA).
Original language | English |
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Article number | 8835096 |
Pages (from-to) | 1708-1711 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 40 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2019 |
Keywords
- Gate-all-around
- HZO
- IMG
- MFMIS
- nanowire
- NC-FET
- poly-Si
- seed layer
- stacked channel