A CMOS process compatible p-channel tunnel field-effect transistor (TFET) with an epitaxial tunnel layer (ETL) structure is demonstrated experimentally. The fabricated ETL p-TFET exhibits high tunneling current (ION ∼ 0.17 μA/μm at /VG/ = 0.5 V after VTH adjustment), ultra-low OFF-state current, and good average subthreshold swing (S.S. ∼100 mV/ decade up to 10 nA/μm). Overall performance exceeds that of the current state-of-the-art Ge-based planar p-TFETs.
- Tunnel field-effect transistor
- band to band tunneling
- subthreshold swing (S.S.)