Experimental Analysis of Quasi-Ballistic Transport in Advanced Si n FinFETs Using New Extraction Method

Ming Huei Lin; Pin Su; Hou Yu Chen; Jen Hsiang Lu; Vincent S. Chang; Shyh Horng Yang

doi:10.1109/LED.2018.2861363

Experimental Analysis of Quasi-Ballistic Transport in Advanced Si n FinFETs Using New Extraction Method

Ming Huei Lin^*, Pin Su, Hou Yu Chen, Jen Hsiang Lu, Vincent S. Chang, Shyh Horng Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si n FinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si n FinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.

Original language	English
Article number	8423118
Pages (from-to)	1397-1400
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1109/LED.2018.2861363
State	Published - 1 Sep 2018

Keywords

Mean free path
drain scattering
long-range Coulomb interaction
neutral defects
quasi-ballistic transport

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title = "Experimental Analysis of Quasi-Ballistic Transport in Advanced Si n FinFETs Using New Extraction Method",

abstract = "For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si n FinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si n FinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.",

keywords = "Mean free path, drain scattering, long-range Coulomb interaction, neutral defects, quasi-ballistic transport",

author = "Lin, {Ming Huei} and Pin Su and Chen, {Hou Yu} and Lu, {Jen Hsiang} and Chang, {Vincent S.} and Yang, {Shyh Horng}",

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AU - Lin, Ming Huei

AU - Su, Pin

AU - Chen, Hou Yu

AU - Lu, Jen Hsiang

AU - Chang, Vincent S.

AU - Yang, Shyh Horng

PY - 2018/9/1

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N2 - For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si n FinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si n FinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.

AB - For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si n FinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si n FinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.

KW - Mean free path

KW - drain scattering

KW - long-range Coulomb interaction

KW - neutral defects

KW - quasi-ballistic transport

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 8423118

ER -

Experimental Analysis of Quasi-Ballistic Transport in Advanced Si n FinFETs Using New Extraction Method

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