@inproceedings{14bada9b891640358c94d83fc36855af,
title = "Excess hot-carrier currents in SOI MOSFETs and its implications",
abstract = "This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free ISUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2 V.",
keywords = "CMOS technology, Hot carriers, Impact ionization, Laboratories, MOSFETs, Silicon, Substrates, Temperature dependence, Thermal conductivity, Thermal resistance",
author = "Pin Su and Goto, {Ken Ichi} and T. Sugii and Chen-Ming Hu",
year = "2002",
month = jan,
day = "1",
doi = "10.1109/RELPHY.2002.996615",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "93--97",
booktitle = "2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual",
address = "美國",
note = "40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 ; Conference date: 07-04-2002 Through 11-04-2002",
}