Excess hot-carrier currents in SOI MOSFETs and its implications

Pin Su; Ken Ichi Goto; Toshihiro Sugii; Chen-Ming Hu

doi:10.1109/RELPHY.2002.996615

Excess hot-carrier currents in SOI MOSFETs and its implications

Pin Su, Ken Ichi Goto, Toshihiro Sugii, Chen-Ming Hu

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free I_SUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.

Original language	English
Pages (from-to)	93-97
Number of pages	5
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/RELPHY.2002.996615
State	Published - 2002

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title = "Excess hot-carrier currents in SOI MOSFETs and its implications",

abstract = "This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free ISUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.",

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AU - Su, Pin

AU - Goto, Ken Ichi

AU - Sugii, Toshihiro

AU - Hu, Chen-Ming

PY - 2002

Y1 - 2002

N2 - This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free ISUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.

AB - This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free ISUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.

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DO - 10.1109/RELPHY.2002.996615

M3 - Article

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EP - 97

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

ER -

Excess hot-carrier currents in SOI MOSFETs and its implications

Abstract

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