Excellent high temperature retention of TiO x N y ReRAM by interfacial layer engineering

Yu Hsuan Lin*, Dai Ying Lee, Chao Hung Wang, Ming Hsiu Lee, Yung Han Ho, Erh Kun Lai, Kuang Hao Chiang, Hsiang Lan Lung, Keh Chung Wang, Tseung-Yuen Tseng, Chih Yuan Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Since the resistance switching of the transition metal oxide (TMO) resistive random access memory (ReRAM) is based on the interaction between the oxygen ions and vacancies, the unintentional oxygen/vacancy reaction should be avoided during data retention. This work demonstrates significant improvements on the retention performance by inserting a Si layer in the TiO x N y ReRAM to block the diffusion of oxygen ions through the Ti/TiO x N y interface. The mechanism and factors that influenced the HRS and LRS retention are also studied. The retention performance of HRS is correlated with its RESET level while the LRS retention depends on the programming current. The proposed Ti/Si/TiO x N y ReRAMs can switch for more than 10 3 cycles from array testing results.

Original languageEnglish
Title of host publication2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538648254
DOIs
StatePublished - 3 Jul 2018
Event2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan
Duration: 16 Apr 201819 Apr 2018

Publication series

Name2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Country/TerritoryTaiwan
CityHsinchu
Period16/04/1819/04/18

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