Evolution of bottom c-plane on wet-etched patterned sapphire substrate

Chien Chih Chen, Feng Ching Hsiao, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.

Original languageEnglish
Pages (from-to)R169-R171
JournalECS Journal of Solid State Science and Technology
Issue number9
StatePublished - 2013


Dive into the research topics of 'Evolution of bottom c-plane on wet-etched patterned sapphire substrate'. Together they form a unique fingerprint.

Cite this