Evolution of bottom c-plane on wet-etched patterned sapphire substrate

Chien Chih Chen; Feng Ching Hsiao; Bo Wen Lin; Wen Ching Hsu; Yew-Chuhg Wu

doi:10.1149/2.022309jss

Evolution of bottom c-plane on wet-etched patterned sapphire substrate

Chien Chih Chen, Feng Ching Hsiao, Bo Wen Lin, Wen Ching Hsu, Yew-Chuhg Wu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.

Original language	English
Journal	ECS Journal of Solid State Science and Technology
Volume	2
Issue number	9
DOIs	https://doi.org/10.1149/2.022309jss
State	Published - 15 Nov 2013

Access to Document

10.1149/2.022309jss

Cite this

@article{8dadcc4137f340b59a6001ac31b57b2a,

title = "Evolution of bottom c-plane on wet-etched patterned sapphire substrate",

abstract = "Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.",

author = "Chen, {Chien Chih} and Hsiao, {Feng Ching} and Lin, {Bo Wen} and Hsu, {Wen Ching} and Yew-Chuhg Wu",

year = "2013",

month = nov,

day = "15",

doi = "10.1149/2.022309jss",

language = "English",

volume = "2",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - Evolution of bottom c-plane on wet-etched patterned sapphire substrate

AU - Chen, Chien Chih

AU - Hsiao, Feng Ching

AU - Lin, Bo Wen

AU - Hsu, Wen Ching

AU - Wu, Yew-Chuhg

PY - 2013/11/15

Y1 - 2013/11/15

N2 - Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.

AB - Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {41318} and the disappearance of bottom c-plane.

UR - http://www.scopus.com/inward/record.url?scp=84887337507&partnerID=8YFLogxK

U2 - 10.1149/2.022309jss

DO - 10.1149/2.022309jss

M3 - Article

AN - SCOPUS:84887337507

VL - 2

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 9

ER -

Evolution of bottom c-plane on wet-etched patterned sapphire substrate

Abstract

Access to Document

Other files and links

Fingerprint

Cite this