Abstract
The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p3/2 absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p1/2 series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm-1 which is probably caused by the electric-field induced mixing of the resonant states.
Original language | English |
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Pages (from-to) | 4970-4975 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 96 |
Issue number | 9 |
DOIs | |
State | Published - 1 Nov 2004 |