Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique

Ming-Dou Ker; Tang Kui Tseng; Sheng Chieh Yang; An Shih; Yaw Ming Tsai

doi:10.1109/VTSA.2003.1252559

Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique

Ming-Dou Ker, Tang Kui Tseng, Sheng Chieh Yang, An Shih, Yaw Ming Tsai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the lt2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices after TLP stress are considered into failure threshold judgment. From the experimental results, It2 of LTPS diodes under forward-biased stress is better than that of LTPS TFT devices. Furthermore, the It2 of LTPS TFT devices under reversebiased stress is more robust than it under forward-biased stress. Such investigation results can help us to design a successful ESD protection for the circuits on glass.

Original language	English
Title of host publication	VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	88-91
Number of pages	4
ISBN (Electronic)	0780377656
DOIs	https://doi.org/10.1109/VTSA.2003.1252559
State	Published - 1 Jan 2003
Event	20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003 - Hsinchu, Taiwan Duration: 6 Oct 2003 → 8 Oct 2003

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume	2003-January
ISSN (Print)	1930-8868

Conference

Conference	20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003
Country/Territory	Taiwan
City	Hsinchu
Period	6/10/03 → 8/10/03

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10.1109/VTSA.2003.1252559

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Ker, M.-D., Tseng, T. K., Yang, S. C., Shih, A., & Tsai, Y. M. (2003). Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique. In VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings (pp. 88-91). Article 1252559 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.2003.1252559

Ker, Ming-Dou ; Tseng, Tang Kui ; Yang, Sheng Chieh et al. / Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique. VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 88-91 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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title = "Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique",

abstract = "ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the lt2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices after TLP stress are considered into failure threshold judgment. From the experimental results, It2 of LTPS diodes under forward-biased stress is better than that of LTPS TFT devices. Furthermore, the It2 of LTPS TFT devices under reversebiased stress is more robust than it under forward-biased stress. Such investigation results can help us to design a successful ESD protection for the circuits on glass.",

author = "Ming-Dou Ker and Tseng, {Tang Kui} and Yang, {Sheng Chieh} and An Shih and Tsai, {Yaw Ming}",

year = "2003",

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doi = "10.1109/VTSA.2003.1252559",

language = "English",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

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booktitle = "VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings",

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Ker, M-D, Tseng, TK, Yang, SC, Shih, A & Tsai, YM 2003, Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique. in VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings., 1252559, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 88-91, 20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003, Hsinchu, Taiwan, 6/10/03. https://doi.org/10.1109/VTSA.2003.1252559

Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique. / Ker, Ming-Dou; Tseng, Tang Kui; Yang, Sheng Chieh et al.
VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 88-91 1252559 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique

AU - Ker, Ming-Dou

AU - Tseng, Tang Kui

AU - Yang, Sheng Chieh

AU - Shih, An

AU - Tsai, Yaw Ming

PY - 2003/1/1

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N2 - ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the lt2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices after TLP stress are considered into failure threshold judgment. From the experimental results, It2 of LTPS diodes under forward-biased stress is better than that of LTPS TFT devices. Furthermore, the It2 of LTPS TFT devices under reversebiased stress is more robust than it under forward-biased stress. Such investigation results can help us to design a successful ESD protection for the circuits on glass.

AB - ESD robustness of Low Temperature Poly-Si (LTPS) diodes and TFT devices has been investigated in this paper. By using the Transmission Line Pulsing (TLP) techniques, the lt2 (secondary breakdown current) of LTPS diodes and TFT devices were measured. To evaluate the ESD robustness of components for ESD protection, the shifts of breakdown voltage and cut-in voltage of LTPS diode and TFT devices after TLP stress are considered into failure threshold judgment. From the experimental results, It2 of LTPS diodes under forward-biased stress is better than that of LTPS TFT devices. Furthermore, the It2 of LTPS TFT devices under reversebiased stress is more robust than it under forward-biased stress. Such investigation results can help us to design a successful ESD protection for the circuits on glass.

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Ker MD, Tseng TK, Yang SC, Shih A, Tsai YM. Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique. In VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 88-91. 1252559. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2003.1252559

Evaluation on ESD robustness of LTPS diode and TFT device by Transmission Line Pulsing (TLP) technique

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