Evaluation of thermal performance of packaged GaN HEMT cascode power switch by transient thermal testing

Szu Hao Chen, Po Chien Chou, Stone Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this investigation, thermal transient measurements and analyses are used to study the thermal performance of a cascoded GaN power device. The method is based on the thermal characterization of the on-resistance (Ron) of the device and the synchronized current-voltage characteristics under continuous operation. The changes in Ron with temperature (25°C-180°C) are measured, statistically studied, and correlations investigated. The proposed method for estimating transient thermal impedance has the following characteristics: (1) it is robust and reproducible; (2) it yields a heating curve to prevent over-heating for the device under test (DUT); (3) it provides in-situ current-voltage characterization; (4) it includes a transient offset correction for initial transient electrical disturbances (such as current collapse); (5) it optimizes a compact thermal model; (6) it is sensitive to package structure and design variables. This monitoring of thermal impedance variation provides a simple and fast non-destructive method for analyzing power switching devices during thermal testing. Satisfactory experimental results confirm the feasibility of in-situ current-voltage characterization and the real power varies with the thermal impedance.

Original languageEnglish
Pages (from-to)1003-1012
Number of pages10
JournalApplied Thermal Engineering
StatePublished - 5 Apr 2016


  • GaN-HEMT cascode switch
  • Power semiconductor device
  • Real power analysis
  • Thermal capacitance
  • Thermal resistance
  • Transient thermal impedance


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