@inproceedings{bdc3b94cce9040c2947dc604a464b9c2,
title = "Evaluation of strain distribution in SiGe nanoshells/Si created by proximal Ge nanospheres using nanobeam electron diffraction",
abstract = "We report the evaluation of 3-dimensional strain distribution in self-aligned SiGe nanoshells that were created by the Ge nanospheres (NPs) penetrating into the Si substrate using a novel selective oxidation of SiGe nanopillars approach. The Ge content and strain distribution in the shell-shaped SiGe nanosheet appear to have a monotonic increase with the depth of penetration of Ge NPs into the Si layer, which are controlled by the thermal oxidation process.",
keywords = "SiGe nanosheet, channel engineering and strain engineering",
author = "Chen, {Chia Tsong} and Peng, {Kang Ping} and Lin, {Horng Chih} and Tom George and Li, {Pei Wen}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731021",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "443--445",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "美國",
}