Evaluation of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin; Chi Chun Chen; Chao-Hsin Chien; Szu Kang Hsein; Meng Fan Wang; Tien-Sheng Chao; Tiao Yuan Huang; Chun Yen Chang

doi:10.1109/55.661167

Evaluation of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin^*, Chi Chun Chen, Chao-Hsin Chien, Szu Kang Hsein, Meng Fan Wang, Tien-Sheng Chao, Tiao Yuan Huang, Chun Yen Chang

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

28 Scopus citations

Abstract

Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

Original language	English
Pages (from-to)	68-70
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	3
DOIs	https://doi.org/10.1109/55.661167
State	Published - 1 Mar 1998

Keywords

Dielectric breakdown
Plasma materials-processing applications
Semiconductor device reliability

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title = "Evaluation of plasma charging damage in ultrathin gate oxides",

abstract = "Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.",

keywords = "Dielectric breakdown, Plasma materials-processing applications, Semiconductor device reliability",

author = "Horng-Chih Lin and Chen, {Chi Chun} and Chao-Hsin Chien and Hsein, {Szu Kang} and Wang, {Meng Fan} and Tien-Sheng Chao and Huang, {Tiao Yuan} and Chang, {Chun Yen}",

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AU - Lin, Horng-Chih

AU - Chen, Chi Chun

AU - Chien, Chao-Hsin

AU - Hsein, Szu Kang

AU - Wang, Meng Fan

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

AU - Chang, Chun Yen

PY - 1998/3/1

Y1 - 1998/3/1

N2 - Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

AB - Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

KW - Dielectric breakdown

KW - Plasma materials-processing applications

KW - Semiconductor device reliability

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Evaluation of plasma charging damage in ultrathin gate oxides

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Keywords

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