Evaluation of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin*, Chi Chun Chen, Chao-Hsin Chien, Szu Kang Hsein, Meng Fan Wang, Tien-Sheng Chao, Tiao Yuan Huang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

28 Scopus citations


Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

Original languageEnglish
Pages (from-to)68-70
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
StatePublished - 1 Mar 1998


  • Dielectric breakdown
  • Plasma materials-processing applications
  • Semiconductor device reliability


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