Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Mar 1998|
- Dielectric breakdown
- Plasma materials-processing applications
- Semiconductor device reliability