Evaluation of Perovskite Hole Selective Contacts for Silicon Solar Cells

Yan Syun Chen, Li Yu Li, Peichen Yu, Yu Chiang Chao, Hsinfei Meng, Sheng Fu Horng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

we investigate the potential and stability of perovskite(MaPbI3) as the hole-selective contact materials for silicon solar cells because perovskite has excellent carrier transport properties for both electrons and holes. We have overcome the problem of forming a continuous perovskite thin film on silicon due to low surface energy by engineering the silicon surface roughness and native oxide. As a result, the short-circuit current density (Jsc) of the device with the perovskite layer increases by 0.6mA/cm2 from 27.73 to 28.32 mA/cm2 and the open-circuit voltage (Voc) increases by 5mV from 517.36 to 512.50 mV, reaching a power conversion efficiency of 10.53%. The solar cell with the perovskite(MaPbI3) hole selective layer exhibits better performance than the reference counterpart. Future work will be focused on tuning the composition of the PbBr2 and PbI2 to modify the work function and enlarge the hole selectivity.

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2675-2678
Number of pages4
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Keywords

  • Perovskite hybrid solar cell
  • photovoltaic cells
  • silicon

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