Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications

Chang Hung Yu; Ming Long Fan; Kuan Chin Yu; Vita Pi Ho Hu; Pin Su; Ching Te Chuang

doi:10.1109/TED.2015.2505064

Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications

Chang Hung Yu, Ming Long Fan, Kuan Chin Yu, Vita Pi Ho Hu, Pin Su^*, Ching Te Chuang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications.

Original language	English
Article number	7358123
Pages (from-to)	625-630
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	2
DOIs	https://doi.org/10.1109/TED.2015.2505064
State	Published - 7 Dec 2015

Keywords

2-D materials
Bilayer
Monolayer
SRAM cell
Transition metal dichalcogenide (TMD)

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@article{5c22cc65fd254eb18cda83e1771df3e2,

title = "Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications",

abstract = "For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications.",

keywords = "2-D materials, Bilayer, Monolayer, SRAM cell, Transition metal dichalcogenide (TMD)",

author = "Yu, {Chang Hung} and Fan, {Ming Long} and Yu, {Kuan Chin} and Hu, {Vita Pi Ho} and Pin Su and Chuang, {Ching Te}",

year = "2015",

month = dec,

day = "7",

doi = "10.1109/TED.2015.2505064",

language = "English",

volume = "63",

pages = "625--630",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications

AU - Yu, Chang Hung

AU - Fan, Ming Long

AU - Yu, Kuan Chin

AU - Hu, Vita Pi Ho

AU - Su, Pin

AU - Chuang, Ching Te

PY - 2015/12/7

Y1 - 2015/12/7

N2 - For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications.

AB - For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications.

KW - 2-D materials

KW - Bilayer

KW - Monolayer

KW - SRAM cell

KW - Transition metal dichalcogenide (TMD)

UR - http://www.scopus.com/inward/record.url?scp=84958125898&partnerID=8YFLogxK

U2 - 10.1109/TED.2015.2505064

DO - 10.1109/TED.2015.2505064

M3 - Article

AN - SCOPUS:84958125898

SN - 0018-9383

VL - 63

SP - 625

EP - 630

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

M1 - 7358123

ER -

Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications

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