@inproceedings{d9fddd5188a94ca6ba7f26c1f134ebda,
title = "Evaluation of analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs",
abstract = " We investigate the analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs. The device analog metrics including the transconductance (g m ), output resistance (R o ) and intrinsic gain (g m × R o ) for TMD device are investigated using 3D atomistic TCAD simulations. It is shown that bilayer TMD devices exhibit better analog performance compared with monolayer TMD devices. The impacts of different mobility ratios of bilayer TMD devices to monolayer TMD devices are examined. ",
author = "Lee, {Hung Yi} and Yu, {Chang Hung} and Pin Su and Chuang, {Ching Te}",
year = "2017",
month = jun,
day = "7",
doi = "10.1109/VLSI-TSA.2017.7942456",
language = "English",
series = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",
address = "美國",
note = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 ; Conference date: 24-04-2017 Through 27-04-2017",
}