Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

Jing Neng Yao; Yueh Chin Lin; Min Song Lin; Ting Jui Huang; Heng-Tung Hsu; Simon M. Sze; Edward Yi Chang

doi:10.1016/j.sse.2019.03.060

Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

Jing Neng Yao, Yueh Chin Lin, Min Song Lin, Ting Jui Huang, Heng-Tung Hsu, Simon M. Sze, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electrical characteristics including low subthreshold swing (SS) of 76 mV/decade, drain induced barrier lowering (DIBL) of 44 mV/V, I_ON/I_OFF ratio of 2.4 × 10⁴, an off-state gate leakage current of less than 5 × 10⁻⁶ A/mm and a G_m, _max of 1100 mS/mm at V_DS = 0.5 V. When increasing the drain-source bias (V_DS) to 1.0 V, the G_m, _max increased to 1750 mS/mm with a cut-off frequency of 113 GHz. These results revealed that the fabrication of source-connected field plate InAs HEMTs achieved excellent device performance for high-speed and low-power logic applications.

Original language	English
Pages (from-to)	55-60
Number of pages	6
Journal	Solid-State Electronics
Volume	157
DOIs	https://doi.org/10.1016/j.sse.2019.03.060
State	Published - 1 Jul 2019

Keywords

Field plate
HEMT
InAs
Low power

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@article{387661e10e49400f90b29bbcc3042bbf,

title = "Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications",

abstract = "In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electrical characteristics including low subthreshold swing (SS) of 76 mV/decade, drain induced barrier lowering (DIBL) of 44 mV/V, ION/IOFF ratio of 2.4 × 104, an off-state gate leakage current of less than 5 × 10−6 A/mm and a Gm, max of 1100 mS/mm at VDS = 0.5 V. When increasing the drain-source bias (VDS) to 1.0 V, the Gm, max increased to 1750 mS/mm with a cut-off frequency of 113 GHz. These results revealed that the fabrication of source-connected field plate InAs HEMTs achieved excellent device performance for high-speed and low-power logic applications.",

keywords = "Field plate, HEMT, InAs, Low power",

author = "Yao, {Jing Neng} and Lin, {Yueh Chin} and Lin, {Min Song} and Huang, {Ting Jui} and Heng-Tung Hsu and Sze, {Simon M.} and Chang, {Edward Yi}",

year = "2019",

month = jul,

day = "1",

doi = "10.1016/j.sse.2019.03.060",

language = "English",

volume = "157",

pages = "55--60",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

AU - Yao, Jing Neng

AU - Lin, Yueh Chin

AU - Lin, Min Song

AU - Huang, Ting Jui

AU - Hsu, Heng-Tung

AU - Sze, Simon M.

AU - Chang, Edward Yi

PY - 2019/7/1

Y1 - 2019/7/1

N2 - In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electrical characteristics including low subthreshold swing (SS) of 76 mV/decade, drain induced barrier lowering (DIBL) of 44 mV/V, ION/IOFF ratio of 2.4 × 104, an off-state gate leakage current of less than 5 × 10−6 A/mm and a Gm, max of 1100 mS/mm at VDS = 0.5 V. When increasing the drain-source bias (VDS) to 1.0 V, the Gm, max increased to 1750 mS/mm with a cut-off frequency of 113 GHz. These results revealed that the fabrication of source-connected field plate InAs HEMTs achieved excellent device performance for high-speed and low-power logic applications.

AB - In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electrical characteristics including low subthreshold swing (SS) of 76 mV/decade, drain induced barrier lowering (DIBL) of 44 mV/V, ION/IOFF ratio of 2.4 × 104, an off-state gate leakage current of less than 5 × 10−6 A/mm and a Gm, max of 1100 mS/mm at VDS = 0.5 V. When increasing the drain-source bias (VDS) to 1.0 V, the Gm, max increased to 1750 mS/mm with a cut-off frequency of 113 GHz. These results revealed that the fabrication of source-connected field plate InAs HEMTs achieved excellent device performance for high-speed and low-power logic applications.

KW - Field plate

KW - HEMT

KW - InAs

KW - Low power

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U2 - 10.1016/j.sse.2019.03.060

DO - 10.1016/j.sse.2019.03.060

M3 - Article

AN - SCOPUS:85065909284

SN - 0038-1101

VL - 157

SP - 55

EP - 60

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

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Keywords

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