Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory

Firman Mangasa Simanjuntak, Debashis Panda, Sridhar Chandrasekaran, Rakesh Aluguri, Chun Chieh Lin*, Tseung Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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