Evaluating gallium-doped ZnO top electrode thickness for achieving a good switch-ability in ZnO2/ZnO bilayer transparent valence change memory

Firman Mangasa Simanjuntak, Debashis Panda, Sridhar Chandrasekaran, Rakesh Aluguri, Chun Chieh Lin*, Tseung Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Gallium doped ZnO (GZO) top electrode thickness dependence of resistive switching characteristic of GZO/ZnO2/ZnO/ITO transparent valence change memory device is investigated. The thickness of the GZO top electrode modulates the resistance of the pristine device. Devices made with thicker GZO layer have higher leakage current; thus, require higher current compliance. An excessively high current compliance leads to a device breakdown upon reset process. Conversely, a very low current compliance may form a tiny conducting filament and is difficult to rejuvenate after the rupture; thus, its cycle-to-cycle characteristic shows a decaying behavior. Nevertheless, transparent valence change devices with a stable endurance and sufficient memory window that operate at a moderate level of current compliance are successfully fabricated by employing an appropriate thickness of the top electrode. We suggest that a good switch-ability of transparent valence change memory devices are strongly affected by the thickness of the top electrode.

Original languageEnglish
Pages (from-to)14-19
Number of pages6
JournalJournal of Electroceramics
Volume46
Issue number1
DOIs
StatePublished - May 2021

Keywords

  • Conducting oxide
  • Resistive switching
  • Transparent electronic
  • Valence change memory

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