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Etching Gas
Seiji Samukawa
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Corresponding author for this work
Institute of Communications Engineering
Research output
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Chapter in Book/Report/Conference proceeding
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Chapter
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Keyphrases
Etching Gas
100%
CF3I
100%
Gas Chemistry
40%
High Performance
20%
Silica
20%
Silicon Dioxide
20%
Delay Time
20%
Capacitance Model
20%
Highly Selective
20%
Etching Rate
20%
Radical Generation
20%
Circuit Performance
20%
Ultra-large-scale
20%
Gas Plasma
20%
Fluorocarbon Gases
20%
High-frequency Plasma
20%
Low-k Film
20%
Low Damage
20%
UV Photons
20%
Fluoropolymer
20%
SiO2 Etching
20%
Very Large Scale Integrated Circuits
20%
Ultra-high Frequency
20%
Tetrafluoroethylene
20%
F-radical
20%
Material Science
Electronic Circuit
100%
Silicon Dioxide
50%
Film
50%
Silicon
50%
Capacitance
50%
Fluoropolymer
50%